High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently reported CMOS power amplifier ICs for microwave and millimeter-wave communication systems such as 5G are summarized and reviewed in this paper. Stacked-FETs are widely utilized to increase the output power and to conquer low breakdown voltage issues. In addition, adaptive bias and load circuits are fully described to improve the linearity and back-off efficiency of the power amplifier ICs in this paper.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages172-174
Number of pages3
ISBN (Electronic)9781728165066
DOIs
Publication statusPublished - 2020 Sep
Event2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 - Hiroshima, Japan
Duration: 2020 Sep 22020 Sep 4

Publication series

Name2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020

Conference

Conference2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
CountryJapan
CityHiroshima
Period20/9/220/9/4

Keywords

  • 5G
  • adaptive bias circuit
  • back-off efficiency
  • CMOS
  • linear power amplifier
  • stacked-FET

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Radiation

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