High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs

Toshihiko Yoshimasu; Mengchu Fang; Tsuyoshi Sugiura

doi:10.1109/RFIT49453.2020.9226212

High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs

Toshihiko Yoshimasu^*, Mengchu Fang, Tsuyoshi Sugiura

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Recently reported CMOS power amplifier ICs for microwave and millimeter-wave communication systems such as 5G are summarized and reviewed in this paper. Stacked-FETs are widely utilized to increase the output power and to conquer low breakdown voltage issues. In addition, adaptive bias and load circuits are fully described to improve the linearity and back-off efficiency of the power amplifier ICs in this paper.

Original language	English
Title of host publication	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	172-174
Number of pages	3
ISBN (Electronic)	9781728165066
DOIs	https://doi.org/10.1109/RFIT49453.2020.9226212
Publication status	Published - 2020 Sept
Event	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 - Hiroshima, Japan Duration: 2020 Sept 2 → 2020 Sept 4

Publication series

Name	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020

Conference

Conference	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Country/Territory	Japan
City	Hiroshima
Period	20/9/2 → 20/9/4

Keywords

5G
CMOS
adaptive bias circuit
back-off efficiency
linear power amplifier
stacked-FET

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Radiation

Access to Document

10.1109/RFIT49453.2020.9226212

Cite this

Yoshimasu, T., Fang, M., & Sugiura, T. (2020). High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs. In 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 (pp. 172-174). [9226212] (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT49453.2020.9226212

High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs. / Yoshimasu, Toshihiko ; Fang, Mengchu; Sugiura, Tsuyoshi.

2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 172-174 9226212 (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yoshimasu, T , Fang, M & Sugiura, T 2020, High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs. in 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020., 9226212, 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, Institute of Electrical and Electronics Engineers Inc., pp. 172-174, 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, Hiroshima, Japan, 20/9/2. https://doi.org/10.1109/RFIT49453.2020.9226212

Yoshimasu T , Fang M, Sugiura T. High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs. In 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 172-174. 9226212. (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020). doi: 10.1109/RFIT49453.2020.9226212

Yoshimasu, Toshihiko ; Fang, Mengchu ; Sugiura, Tsuyoshi. / High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs. 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 172-174 (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020).

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abstract = "Recently reported CMOS power amplifier ICs for microwave and millimeter-wave communication systems such as 5G are summarized and reviewed in this paper. Stacked-FETs are widely utilized to increase the output power and to conquer low breakdown voltage issues. In addition, adaptive bias and load circuits are fully described to improve the linearity and back-off efficiency of the power amplifier ICs in this paper. ",

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author = "Toshihiko Yoshimasu and Mengchu Fang and Tsuyoshi Sugiura",

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High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs

Abstract

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Keywords

ASJC Scopus subject areas

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