High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

Tetsuya Akasaka, Hideki Gotoh, Tadashi Saito, Toshiki Makimoto

Research output: Contribution to journalArticle

106 Citations (Scopus)

Abstract

InGaN multiple quantum wells were grown on InGaN underlying layers 50 nm thick by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements were performed by selective excitation of the quantum wells under a weak excitation condition. The PL intensity was almost constant at temperatures ranging from 17 to 150 K. Assuming that the internal quantum efficiency (ηint) equals unity at 17 K, we obtained ηint as high as 0.71 even at room temperature. The reason for the high ηint is the reduction of nonradiative recombination centers by the incorporation of indium atoms into the underlying layer.

Original languageEnglish
Pages (from-to)3089-3091
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number15
DOIs
Publication statusPublished - 2004 Oct 11
Externally publishedYes

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quantum wells
photoluminescence
vapor phase epitaxy
excitation
indium
quantum efficiency
unity
room temperature
atoms
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers. / Akasaka, Tetsuya; Gotoh, Hideki; Saito, Tadashi; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 85, No. 15, 11.10.2004, p. 3089-3091.

Research output: Contribution to journalArticle

Akasaka, Tetsuya ; Gotoh, Hideki ; Saito, Tadashi ; Makimoto, Toshiki. / High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers. In: Applied Physics Letters. 2004 ; Vol. 85, No. 15. pp. 3089-3091.
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