A high-performance ambipolar light-emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence characteristics is described. By using this device, a conspicuous light-confined edge emission and current-density-dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials