HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE.

Yuichi Matsushima, K. Sakai, S. Akiba, T. Yamamoto

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Citations (Scopus)

Abstract

A heterostructure avalanche photodiode (HAPD) with an In//0//. //5//3Ga//0//. //4//7As light absorption layer and an InP avalanche multiplication layer was successfully fabricated by a liquid phase epitaxy and a Zn-diffusion technique. This HAPD has yielded an extremely high avalanche gain of 1. 6 multiplied by 10**4 and a dark-current density as low as 1 multiplied by 10** minus **5 A cm** minus **2 at 0. 9 V//B.

Original languageEnglish
Title of host publicationIEE Conference Publication
PublisherIEE
Pages226-233
Number of pages8
Edition190
Publication statusPublished - 1980
Externally publishedYes
EventEur Conf on Opt Commun, 6th - York, Engl
Duration: 1980 Sep 161980 Sep 19

Other

OtherEur Conf on Opt Commun, 6th
CityYork, Engl
Period80/9/1680/9/19

Fingerprint

Avalanche photodiodes
Heterojunctions
Liquid phase epitaxy
Dark currents
Light absorption
Current density

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Matsushima, Y., Sakai, K., Akiba, S., & Yamamoto, T. (1980). HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE. In IEE Conference Publication (190 ed., pp. 226-233). IEE.

HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE. / Matsushima, Yuichi; Sakai, K.; Akiba, S.; Yamamoto, T.

IEE Conference Publication. 190. ed. IEE, 1980. p. 226-233.

Research output: Chapter in Book/Report/Conference proceedingChapter

Matsushima, Y, Sakai, K, Akiba, S & Yamamoto, T 1980, HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE. in IEE Conference Publication. 190 edn, IEE, pp. 226-233, Eur Conf on Opt Commun, 6th, York, Engl, 80/9/16.
Matsushima Y, Sakai K, Akiba S, Yamamoto T. HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE. In IEE Conference Publication. 190 ed. IEE. 1980. p. 226-233
Matsushima, Yuichi ; Sakai, K. ; Akiba, S. ; Yamamoto, T. / HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE. IEE Conference Publication. 190. ed. IEE, 1980. pp. 226-233
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abstract = "A heterostructure avalanche photodiode (HAPD) with an In//0//. //5//3Ga//0//. //4//7As light absorption layer and an InP avalanche multiplication layer was successfully fabricated by a liquid phase epitaxy and a Zn-diffusion technique. This HAPD has yielded an extremely high avalanche gain of 1. 6 multiplied by 10**4 and a dark-current density as low as 1 multiplied by 10** minus **5 A cm** minus **2 at 0. 9 V//B.",
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