High-performance diamond metal-semiconductor field-effect transistor with 1 μm gate length

Hitoshi Umezawa, Kazuo Tsugawa, Sadanori Yamanaka, Daisuke Takeuchi, Hideyo Okushi, Hiroshi Kawarada

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

High-performance metal-semiconductor field-effect transistors (MESFETs) using the p-type surface conductive layer on homoepitaxial diamond are demonstrated. The maximum transconductance is 110 mS/mm, which is the highest value ever reported in diamond FETs. This value exceeds the normal transconductance of a Si-metal-oxide semiconductor field-effect transistors (MOSFET) with equivalent gate length. The transconductance of the present diamond FETs is proportional to the reciprocal of gate length. Accordingly, the characteristics can be improved by the refinement of gate length. By using an appropriate FET fabrication process, it is expected that the transconductance of a diamond MESFET exceeds 500 mS/mm at gate lengths less than 0.2 μm.

Original languageEnglish
Pages (from-to)L1222-L1224
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number11 A
Publication statusPublished - 1999 Nov 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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