High performance diamond MISFETs using CaF2 gate insulator

S. Miyamoto, H. Matsudaira, H. Ishizaka, K. Nakazawa, H. Taniuchi, H. Umezawa, M. Tachiki, H. Kawarada

Research output: Contribution to journalArticle

28 Citations (Scopus)


A cut-off frequency of 15 GHz and a maximum frequency of oscillation of 20 GHz are realized in a 0.4-μm gate diamond metal-insulator-semiconductor field-effect transistor (MISFET). The cut-off frequency is the highest value for diamond FETs ever reported. The RF characteristics of the MISFETs are higher than those of metal-semiconductor FETs at the same gate lengths. The CaF2 gate insulator improves the carrier mobility according to the Hall measurement system. The mobility increases in the surface conductive layer result in high RF performance. The source-gate passivation of CaF2 results in the high DC transconductance because of the reduction of series resistances. A cut-off frequency of more than 30 GHz is expected with the gate minimization and the CaF2 passivation of source-gate and gate-drain spacings.

Original languageEnglish
Pages (from-to)399-402
Number of pages4
JournalDiamond and Related Materials
Issue number3-7
Publication statusPublished - 2003 Jan 1


  • CaF
  • Diamond properties application
  • FET
  • Hydrogen-terminated
  • MIS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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    Miyamoto, S., Matsudaira, H., Ishizaka, H., Nakazawa, K., Taniuchi, H., Umezawa, H., Tachiki, M., & Kawarada, H. (2003). High performance diamond MISFETs using CaF2 gate insulator. Diamond and Related Materials, 12(3-7), 399-402. https://doi.org/10.1016/S0925-9635(03)00034-7