High performance diamond MISFETs using CaF2 gate insulator

S. Miyamoto, H. Matsudaira, H. Ishizaka, K. Nakazawa, H. Taniuchi, H. Umezawa, M. Tachiki, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    26 Citations (Scopus)

    Abstract

    A cut-off frequency of 15 GHz and a maximum frequency of oscillation of 20 GHz are realized in a 0.4-μm gate diamond metal-insulator-semiconductor field-effect transistor (MISFET). The cut-off frequency is the highest value for diamond FETs ever reported. The RF characteristics of the MISFETs are higher than those of metal-semiconductor FETs at the same gate lengths. The CaF2 gate insulator improves the carrier mobility according to the Hall measurement system. The mobility increases in the surface conductive layer result in high RF performance. The source-gate passivation of CaF2 results in the high DC transconductance because of the reduction of series resistances. A cut-off frequency of more than 30 GHz is expected with the gate minimization and the CaF2 passivation of source-gate and gate-drain spacings.

    Original languageEnglish
    Pages (from-to)399-402
    Number of pages4
    JournalDiamond and Related Materials
    Volume12
    Issue number3-7
    DOIs
    Publication statusPublished - 2003 Mar

    Fingerprint

    Diamond
    Cutoff frequency
    Diamonds
    field effect transistors
    diamonds
    insulators
    Field effect transistors
    Passivation
    MISFET devices
    Carrier mobility
    Transconductance
    cut-off
    passivity
    Metals
    Semiconductor materials
    MIS (semiconductors)
    transconductance
    carrier mobility
    direct current
    spacing

    Keywords

    • CaF
    • Diamond properties application
    • FET
    • Hydrogen-terminated
    • MIS

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Miyamoto, S., Matsudaira, H., Ishizaka, H., Nakazawa, K., Taniuchi, H., Umezawa, H., ... Kawarada, H. (2003). High performance diamond MISFETs using CaF2 gate insulator. Diamond and Related Materials, 12(3-7), 399-402. https://doi.org/10.1016/S0925-9635(03)00034-7

    High performance diamond MISFETs using CaF2 gate insulator. / Miyamoto, S.; Matsudaira, H.; Ishizaka, H.; Nakazawa, K.; Taniuchi, H.; Umezawa, H.; Tachiki, M.; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 12, No. 3-7, 03.2003, p. 399-402.

    Research output: Contribution to journalArticle

    Miyamoto, S, Matsudaira, H, Ishizaka, H, Nakazawa, K, Taniuchi, H, Umezawa, H, Tachiki, M & Kawarada, H 2003, 'High performance diamond MISFETs using CaF2 gate insulator', Diamond and Related Materials, vol. 12, no. 3-7, pp. 399-402. https://doi.org/10.1016/S0925-9635(03)00034-7
    Miyamoto S, Matsudaira H, Ishizaka H, Nakazawa K, Taniuchi H, Umezawa H et al. High performance diamond MISFETs using CaF2 gate insulator. Diamond and Related Materials. 2003 Mar;12(3-7):399-402. https://doi.org/10.1016/S0925-9635(03)00034-7
    Miyamoto, S. ; Matsudaira, H. ; Ishizaka, H. ; Nakazawa, K. ; Taniuchi, H. ; Umezawa, H. ; Tachiki, M. ; Kawarada, Hiroshi. / High performance diamond MISFETs using CaF2 gate insulator. In: Diamond and Related Materials. 2003 ; Vol. 12, No. 3-7. pp. 399-402.
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    abstract = "A cut-off frequency of 15 GHz and a maximum frequency of oscillation of 20 GHz are realized in a 0.4-μm gate diamond metal-insulator-semiconductor field-effect transistor (MISFET). The cut-off frequency is the highest value for diamond FETs ever reported. The RF characteristics of the MISFETs are higher than those of metal-semiconductor FETs at the same gate lengths. The CaF2 gate insulator improves the carrier mobility according to the Hall measurement system. The mobility increases in the surface conductive layer result in high RF performance. The source-gate passivation of CaF2 results in the high DC transconductance because of the reduction of series resistances. A cut-off frequency of more than 30 GHz is expected with the gate minimization and the CaF2 passivation of source-gate and gate-drain spacings.",
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    AU - Taniuchi, H.

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