High performance n-channel organic field-effect transistors based on N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide

Yoshinobu Hosoi, Yukio Furukawa

    Research output: Contribution to journalArticle

    8 Citations (Scopus)


    The organic field-effect transistors based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide have been fabricated on the pristine SiO2/Si substrate whose surfaces are modified with hexamethyldisilazane (HMDS) and octadecyltriethoxysilane (OTES). The surface modifications have enhanced the electron mobility and on/off ratio, and decreased the threshold voltage. The atomic force microscopy and infrared spectroscopy studies have revealed no differences in the morphology and molecular orientation of the thin films on the pristine and the HMDS-treated substrates.

    Original languageEnglish
    Pages (from-to)37-43
    Number of pages7
    JournalMolecular Crystals and Liquid Crystals
    Issue number1
    Publication statusPublished - 2006 Jan



    • Atomic force microscopy
    • Infrared spectroscopy
    • N,N′-dioctyl-3,4,9,10- perylene tetracarboxylic diimide
    • Organic field-effect transistor

    ASJC Scopus subject areas

    • Condensed Matter Physics

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