The organic field-effect transistors based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide have been fabricated on the pristine SiO2/Si substrate whose surfaces are modified with hexamethyldisilazane (HMDS) and octadecyltriethoxysilane (OTES). The surface modifications have enhanced the electron mobility and on/off ratio, and decreased the threshold voltage. The atomic force microscopy and infrared spectroscopy studies have revealed no differences in the morphology and molecular orientation of the thin films on the pristine and the HMDS-treated substrates.
- Atomic force microscopy
- Infrared spectroscopy
- N,N′-dioctyl-3,4,9,10- perylene tetracarboxylic diimide
- Organic field-effect transistor
ASJC Scopus subject areas
- Condensed Matter Physics