High-performance surface-channel diamond field-effect transistors

Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hideyo Okushi, Hiroshi Kawarada

Research output: Contribution to journalConference article

Abstract

High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

Original languageEnglish
Pages (from-to)815-818
Number of pages4
JournalMaterials Science Forum
Volume353-356
Publication statusPublished - 2001 Mar 14

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Umezawa, H., Taniuchi, H., Arima, T., Tachiki, M., Okushi, H., & Kawarada, H. (2001). High-performance surface-channel diamond field-effect transistors. Materials Science Forum, 353-356, 815-818.