High-performance surface-channel diamond field-effect transistors

Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hideyo Okushi, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    Abstract

    High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

    Original languageEnglish
    Pages (from-to)815-818
    Number of pages4
    JournalUnknown Journal
    Volume353-356
    Publication statusPublished - 2001

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    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Umezawa, H., Taniuchi, H., Arima, T., Tachiki, M., Okushi, H., & Kawarada, H. (2001). High-performance surface-channel diamond field-effect transistors. Unknown Journal, 353-356, 815-818.