High-performance transparent flexible transistors using carbon nanotube films

Taishi Takenobu, Tetsuo Takahashi, Takayoshi Kanbara, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Yoshihiro Iwasa

Research output: Contribution to journalArticle

121 Citations (Scopus)

Abstract

Transparent flexible thin-film transistors (tf-TFTs) are an important focus of research since present silicon-based electronics cannot realize such devices. Here, we demonstrate a single-walled carbon nanotube (SWNT) tf-TFTs based on the solution process using transparent electrodes. SWNT tf-TFTs typically exhibit a mobility of 0.5 cm2 V s and an on/off current ratio of ∼ 104. More importantly, these transistors are highly flexible and can be bent to a radius of 7.5 mm without a significant loss in performance. This study therefore represents a major step towards "SWNT transparent plastic electronics."

Original languageEnglish
Article number033511
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number3
DOIs
Publication statusPublished - 2006
Externally publishedYes

Fingerprint

transistors
carbon nanotubes
thin films
electronics
plastics
radii
electrodes
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Takenobu, T., Takahashi, T., Kanbara, T., Tsukagoshi, K., Aoyagi, Y., & Iwasa, Y. (2006). High-performance transparent flexible transistors using carbon nanotube films. Applied Physics Letters, 88(3), 1-3. [033511]. https://doi.org/10.1063/1.2166693

High-performance transparent flexible transistors using carbon nanotube films. / Takenobu, Taishi; Takahashi, Tetsuo; Kanbara, Takayoshi; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu; Iwasa, Yoshihiro.

In: Applied Physics Letters, Vol. 88, No. 3, 033511, 2006, p. 1-3.

Research output: Contribution to journalArticle

Takenobu, T, Takahashi, T, Kanbara, T, Tsukagoshi, K, Aoyagi, Y & Iwasa, Y 2006, 'High-performance transparent flexible transistors using carbon nanotube films', Applied Physics Letters, vol. 88, no. 3, 033511, pp. 1-3. https://doi.org/10.1063/1.2166693
Takenobu T, Takahashi T, Kanbara T, Tsukagoshi K, Aoyagi Y, Iwasa Y. High-performance transparent flexible transistors using carbon nanotube films. Applied Physics Letters. 2006;88(3):1-3. 033511. https://doi.org/10.1063/1.2166693
Takenobu, Taishi ; Takahashi, Tetsuo ; Kanbara, Takayoshi ; Tsukagoshi, Kazuhito ; Aoyagi, Yoshinobu ; Iwasa, Yoshihiro. / High-performance transparent flexible transistors using carbon nanotube films. In: Applied Physics Letters. 2006 ; Vol. 88, No. 3. pp. 1-3.
@article{515ae08ffe304cb3ae8dcb73bf9b2874,
title = "High-performance transparent flexible transistors using carbon nanotube films",
abstract = "Transparent flexible thin-film transistors (tf-TFTs) are an important focus of research since present silicon-based electronics cannot realize such devices. Here, we demonstrate a single-walled carbon nanotube (SWNT) tf-TFTs based on the solution process using transparent electrodes. SWNT tf-TFTs typically exhibit a mobility of 0.5 cm2 V s and an on/off current ratio of ∼ 104. More importantly, these transistors are highly flexible and can be bent to a radius of 7.5 mm without a significant loss in performance. This study therefore represents a major step towards {"}SWNT transparent plastic electronics.{"}",
author = "Taishi Takenobu and Tetsuo Takahashi and Takayoshi Kanbara and Kazuhito Tsukagoshi and Yoshinobu Aoyagi and Yoshihiro Iwasa",
year = "2006",
doi = "10.1063/1.2166693",
language = "English",
volume = "88",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - High-performance transparent flexible transistors using carbon nanotube films

AU - Takenobu, Taishi

AU - Takahashi, Tetsuo

AU - Kanbara, Takayoshi

AU - Tsukagoshi, Kazuhito

AU - Aoyagi, Yoshinobu

AU - Iwasa, Yoshihiro

PY - 2006

Y1 - 2006

N2 - Transparent flexible thin-film transistors (tf-TFTs) are an important focus of research since present silicon-based electronics cannot realize such devices. Here, we demonstrate a single-walled carbon nanotube (SWNT) tf-TFTs based on the solution process using transparent electrodes. SWNT tf-TFTs typically exhibit a mobility of 0.5 cm2 V s and an on/off current ratio of ∼ 104. More importantly, these transistors are highly flexible and can be bent to a radius of 7.5 mm without a significant loss in performance. This study therefore represents a major step towards "SWNT transparent plastic electronics."

AB - Transparent flexible thin-film transistors (tf-TFTs) are an important focus of research since present silicon-based electronics cannot realize such devices. Here, we demonstrate a single-walled carbon nanotube (SWNT) tf-TFTs based on the solution process using transparent electrodes. SWNT tf-TFTs typically exhibit a mobility of 0.5 cm2 V s and an on/off current ratio of ∼ 104. More importantly, these transistors are highly flexible and can be bent to a radius of 7.5 mm without a significant loss in performance. This study therefore represents a major step towards "SWNT transparent plastic electronics."

UR - http://www.scopus.com/inward/record.url?scp=31144457254&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31144457254&partnerID=8YFLogxK

U2 - 10.1063/1.2166693

DO - 10.1063/1.2166693

M3 - Article

AN - SCOPUS:31144457254

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 033511

ER -