High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation

Shigeo Yamashita, Shin ichi Nakatsuka, Kenji Uchida, Toshihiro Kawano, Takashi Kajimura

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

A high-power laser in the 780 nm wavelength region has been realized by introducing an AlGaAs ternary alloy quantum-well structure. Investigations focus on the characteristic temperature and catastrophic optical damage (COD) level. It is found that a triple quantum-well (TQW) active layer structure has superior characteristics for high-power operation. Stable operation for over 1000 h under 50°C and 60 mW conditions is achieved. a relatively high characteristic temperature of around 150 K is also obtained.

Original languageEnglish
Pages (from-to)1544-1549
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume27
Issue number6
DOIs
Publication statusPublished - 1991 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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