High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation

Shigeo Yamashita; Shin ichi Nakatsuka; Kenji Uchida; Toshihiro Kawano; Takashi Kajimura

doi:10.1109/3.89975

High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation

Shigeo Yamashita, Shin ichi Nakatsuka, Kenji Uchida, Toshihiro Kawano, Takashi Kajimura

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A high-power laser in the 780 nm wavelength region has been realized by introducing an AlGaAs ternary alloy quantum-well structure. Investigations focus on the characteristic temperature and catastrophic optical damage (COD) level. It is found that a triple quantum-well (TQW) active layer structure has superior characteristics for high-power operation. Stable operation for over 1000 h under 50°C and 60 mW conditions is achieved. a relatively high characteristic temperature of around 150 K is also obtained.

Original language	English
Pages (from-to)	1544-1549
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	27
Issue number	6
DOIs	https://doi.org/10.1109/3.89975
Publication status	Published - 1991 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation

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ASJC Scopus subject areas

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