High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation

Shigeo Yamashita, Shin ichi Nakatsuka, Kenji Uchida, Toshihiro Kawano, Takashi Kajimura

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A high-power laser in the 780 nm wavelength region has been realized by introducing an AlGaAs ternary alloy quantum-well structure. Investigations focus on the characteristic temperature and catastrophic optical damage (COD) level. It is found that a triple quantum-well (TQW) active layer structure has superior characteristics for high-power operation. Stable operation for over 1000 h under 50°C and 60 mW conditions is achieved. a relatively high characteristic temperature of around 150 K is also obtained.

Original languageEnglish
Pages (from-to)1544-1549
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume27
Issue number6
DOIs
Publication statusPublished - 1991
Externally publishedYes

Fingerprint

Quantum well lasers
quantum well lasers
Semiconductor quantum wells
aluminum gallium arsenides
Ternary alloys
High power lasers
quantum wells
ternary alloys
Wavelength
Temperature
high power lasers
damage
temperature
wavelengths

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation. / Yamashita, Shigeo; Nakatsuka, Shin ichi; Uchida, Kenji; Kawano, Toshihiro; Kajimura, Takashi.

In: IEEE Journal of Quantum Electronics, Vol. 27, No. 6, 1991, p. 1544-1549.

Research output: Contribution to journalArticle

Yamashita, Shigeo ; Nakatsuka, Shin ichi ; Uchida, Kenji ; Kawano, Toshihiro ; Kajimura, Takashi. / High-Power 780 Nm Algaas Quantum-Well Lasers and Their Reliable Operation. In: IEEE Journal of Quantum Electronics. 1991 ; Vol. 27, No. 6. pp. 1544-1549.
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