High power AlGaAs/GaAs HBTs and their application to mobile communications systems

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7 Citations (Scopus)

Abstract

This paper addresses the power application of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) to L-band mobile communications systems. From points of view of circuit and systems design, features of HBT technology are discussed and compared with those of GaAs MESFET technology.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages787-790
Number of pages4
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 1995 Dec 101995 Dec 13

Other

OtherProceedings of the 1995 International Electron Devices Meeting, IEDM'95
CityWashington, DC, USA
Period95/12/1095/12/13

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Yoshimasu, T. (1995). High power AlGaAs/GaAs HBTs and their application to mobile communications systems. In Technical Digest - International Electron Devices Meeting (pp. 787-790). IEEE.