High power AlGaAs/GaAs HBTs and their application to mobile communications systems

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)

Abstract

This paper addresses the power application of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) to L-band mobile communications systems. From points of view of circuit and systems design, features of HBT technology are discussed and compared with those of GaAs MESFET technology.

Original languageEnglish
Pages (from-to)787-790
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1995 Dec 1
Externally publishedYes
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 1995 Dec 101995 Dec 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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