High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer

Toshiki Makimoto, Yoshiharu Yamauchi, Kazuhide Kumakura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm 2 and 230 kW/cm 2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Pages73-78
Number of pages6
Volume798
Publication statusPublished - 2003
Externally publishedYes
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 2003 Dec 12003 Dec 5

Other

OtherGaN and Related Alloys - 2003
CountryUnited States
CityBoston, MA
Period03/12/103/12/5

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Makimoto, T., Yamauchi, Y., & Kumakura, K. (2003). High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer. In H. M. Ng, M. Wraback, K. Hiramatsu, & N. Grandjean (Eds.), Materials Research Society Symposium - Proceedings (Vol. 798, pp. 73-78)