High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer

Toshiki Makimoto, Yoshiharu Yamauchi, Kazuhide Kumakura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm 2 and 230 kW/cm 2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Pages73-78
Number of pages6
Volume798
Publication statusPublished - 2003
Externally publishedYes
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 2003 Dec 12003 Dec 5

Other

OtherGaN and Related Alloys - 2003
CountryUnited States
CityBoston, MA
Period03/12/103/12/5

Fingerprint

Heterojunction bipolar transistors
Metallorganic vapor phase epitaxy
Electric potential
Current voltage characteristics
Bias voltage
Power electronics
Nitrides
Leakage currents
Transistors
Diodes
Energy gap
Current density
Substrates
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Makimoto, T., Yamauchi, Y., & Kumakura, K. (2003). High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer. In H. M. Ng, M. Wraback, K. Hiramatsu, & N. Grandjean (Eds.), Materials Research Society Symposium - Proceedings (Vol. 798, pp. 73-78)

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer. / Makimoto, Toshiki; Yamauchi, Yoshiharu; Kumakura, Kazuhide.

Materials Research Society Symposium - Proceedings. ed. / H.M. Ng; M. Wraback; K. Hiramatsu; N. Grandjean. Vol. 798 2003. p. 73-78.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Makimoto, T, Yamauchi, Y & Kumakura, K 2003, High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer. in HM Ng, M Wraback, K Hiramatsu & N Grandjean (eds), Materials Research Society Symposium - Proceedings. vol. 798, pp. 73-78, GaN and Related Alloys - 2003, Boston, MA, United States, 03/12/1.
Makimoto T, Yamauchi Y, Kumakura K. High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer. In Ng HM, Wraback M, Hiramatsu K, Grandjean N, editors, Materials Research Society Symposium - Proceedings. Vol. 798. 2003. p. 73-78
Makimoto, Toshiki ; Yamauchi, Yoshiharu ; Kumakura, Kazuhide. / High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer. Materials Research Society Symposium - Proceedings. editor / H.M. Ng ; M. Wraback ; K. Hiramatsu ; N. Grandjean. Vol. 798 2003. pp. 73-78
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