High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer

Toshiki Makimoto, Yoshiharu Yamauchi, Kazuhide Kumakura

Research output: Contribution to journalConference article

Abstract

We have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

Original languageEnglish
Pages (from-to)73-78
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume798
Publication statusPublished - 2003 Dec 1
Externally publishedYes
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 2003 Dec 12003 Dec 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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