High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto, Yoshiharu Yamauchi, Kazuhide Kumakura

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

The high-power characteristics of GaN/InGaN double heterojunction bipolar transistors (HBT) were investigated. It was observed that the maximum collector current was not limited by the thermal effect but by the Kirk effect. It was also observed that the maximum collecter current is proportional to the emitter size. It was found that the breakdown voltage of base-collecter diode exceeded 50 V due to the wide band gap of the n-GaN collector.

Original languageEnglish
Pages (from-to)1964-1966
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number11
DOIs
Publication statusPublished - 2004 Mar 15
Externally publishedYes

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bipolar transistors
accumulators
heterojunctions
electrical faults
temperature effects
emitters
diodes
broadband

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors. / Makimoto, Toshiki; Yamauchi, Yoshiharu; Kumakura, Kazuhide.

In: Applied Physics Letters, Vol. 84, No. 11, 15.03.2004, p. 1964-1966.

Research output: Contribution to journalArticle

Makimoto, Toshiki ; Yamauchi, Yoshiharu ; Kumakura, Kazuhide. / High-power characteristics of GaN/InGaN double heterojunction bipolar transistors. In: Applied Physics Letters. 2004 ; Vol. 84, No. 11. pp. 1964-1966.
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