High power extraction of 340-350 nm UV-LEDs

Toshio Nishida, Tomoyuki Ban, Hisao Saito, Naoki Kobayashi, Toshiki Makimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The potential of high power extraction from AlGaN-based ultraviolet light emitting diodes (UV-LEDs) is described. Improvements of UV-LEDs are shortly introduced from the viewpoints of nitride epitaxial growth, heterostracture optical characteristics based on the internal polarization field, and p-n junction design. The UV light extraction enhancement by utilizing the GaN-free transparent UV-LED structure and highly efficient UV-LEDs fabricated by introducing a high-quality AlN template on sapphire substrate are described. The maximum output powers are 8.6 mW and 5.5 mW at an injection current of less than 150 mA, at the emission wavelength of 350 nm and 340 nm, respectively. The highest external quantum efficiencies are 2.2 and 1.7 %, respectively. The application to white lighting and the potential of the high-flux UV-extraction utilizing bulk AlN substrate are also investigated.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsM. Razeghi, G.J. Brown
Pages387-399
Number of pages13
Volume5359
DOIs
Publication statusPublished - 2004
Externally publishedYes
EventQuantum Sensing and Nanophotonic Devices - San Jose, CA, United States
Duration: 2004 Jan 252004 Jan 29

Other

OtherQuantum Sensing and Nanophotonic Devices
CountryUnited States
CitySan Jose, CA
Period04/1/2504/1/29

Fingerprint

ultraviolet radiation
Light emitting diodes
light emitting diodes
Substrates
p-n junctions
Quantum efficiency
Epitaxial growth
Sapphire
Nitrides
Ultraviolet radiation
illuminating
nitrides
quantum efficiency
sapphire
templates
Lighting
Polarization
injection
Fluxes
Wavelength

Keywords

  • AIN
  • Dislocation
  • Extraction
  • Light emitting diode
  • Ultraviolet

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Nishida, T., Ban, T., Saito, H., Kobayashi, N., & Makimoto, T. (2004). High power extraction of 340-350 nm UV-LEDs. In M. Razeghi, & G. J. Brown (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5359, pp. 387-399) https://doi.org/10.1117/12.524560

High power extraction of 340-350 nm UV-LEDs. / Nishida, Toshio; Ban, Tomoyuki; Saito, Hisao; Kobayashi, Naoki; Makimoto, Toshiki.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / M. Razeghi; G.J. Brown. Vol. 5359 2004. p. 387-399.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishida, T, Ban, T, Saito, H, Kobayashi, N & Makimoto, T 2004, High power extraction of 340-350 nm UV-LEDs. in M Razeghi & GJ Brown (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5359, pp. 387-399, Quantum Sensing and Nanophotonic Devices, San Jose, CA, United States, 04/1/25. https://doi.org/10.1117/12.524560
Nishida T, Ban T, Saito H, Kobayashi N, Makimoto T. High power extraction of 340-350 nm UV-LEDs. In Razeghi M, Brown GJ, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5359. 2004. p. 387-399 https://doi.org/10.1117/12.524560
Nishida, Toshio ; Ban, Tomoyuki ; Saito, Hisao ; Kobayashi, Naoki ; Makimoto, Toshiki. / High power extraction of 340-350 nm UV-LEDs. Proceedings of SPIE - The International Society for Optical Engineering. editor / M. Razeghi ; G.J. Brown. Vol. 5359 2004. pp. 387-399
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