Abstract
The potential of high power extraction from AlGaN-based ultraviolet light emitting diodes (UV-LEDs) is described. Improvements of UV-LEDs are shortly introduced from the viewpoints of nitride epitaxial growth, heterostracture optical characteristics based on the internal polarization field, and p-n junction design. The UV light extraction enhancement by utilizing the GaN-free transparent UV-LED structure and highly efficient UV-LEDs fabricated by introducing a high-quality AlN template on sapphire substrate are described. The maximum output powers are 8.6 mW and 5.5 mW at an injection current of less than 150 mA, at the emission wavelength of 350 nm and 340 nm, respectively. The highest external quantum efficiencies are 2.2 and 1.7 %, respectively. The application to white lighting and the potential of the high-flux UV-extraction utilizing bulk AlN substrate are also investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 387-399 |
| Number of pages | 13 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5359 |
| DOIs | |
| Publication status | Published - 2004 Sep 13 |
| Externally published | Yes |
| Event | Quantum Sensing and Nanophotonic Devices - San Jose, CA, United States Duration: 2004 Jan 25 → 2004 Jan 29 |
Keywords
- AIN
- Dislocation
- Extraction
- Light emitting diode
- Ultraviolet
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering