Abstract
The potential of high power extraction from AlGaN-based ultraviolet light emitting diodes (UV-LEDs) is described. Improvements of UV-LEDs are shortly introduced from the viewpoints of nitride epitaxial growth, heterostracture optical characteristics based on the internal polarization field, and p-n junction design. The UV light extraction enhancement by utilizing the GaN-free transparent UV-LED structure and highly efficient UV-LEDs fabricated by introducing a high-quality AlN template on sapphire substrate are described. The maximum output powers are 8.6 mW and 5.5 mW at an injection current of less than 150 mA, at the emission wavelength of 350 nm and 340 nm, respectively. The highest external quantum efficiencies are 2.2 and 1.7 %, respectively. The application to white lighting and the potential of the high-flux UV-extraction utilizing bulk AlN substrate are also investigated.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | M. Razeghi, G.J. Brown |
| Pages | 387-399 |
| Number of pages | 13 |
| Volume | 5359 |
| DOIs | |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | Quantum Sensing and Nanophotonic Devices - San Jose, CA, United States Duration: 2004 Jan 25 → 2004 Jan 29 |
Other
| Other | Quantum Sensing and Nanophotonic Devices |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 04/1/25 → 04/1/29 |
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Keywords
- AIN
- Dislocation
- Extraction
- Light emitting diode
- Ultraviolet
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
High power extraction of 340-350 nm UV-LEDs. / Nishida, Toshio; Ban, Tomoyuki; Saito, Hisao; Kobayashi, Naoki; Makimoto, Toshiki.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / M. Razeghi; G.J. Brown. Vol. 5359 2004. p. 387-399.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High power extraction of 340-350 nm UV-LEDs
AU - Nishida, Toshio
AU - Ban, Tomoyuki
AU - Saito, Hisao
AU - Kobayashi, Naoki
AU - Makimoto, Toshiki
PY - 2004
Y1 - 2004
N2 - The potential of high power extraction from AlGaN-based ultraviolet light emitting diodes (UV-LEDs) is described. Improvements of UV-LEDs are shortly introduced from the viewpoints of nitride epitaxial growth, heterostracture optical characteristics based on the internal polarization field, and p-n junction design. The UV light extraction enhancement by utilizing the GaN-free transparent UV-LED structure and highly efficient UV-LEDs fabricated by introducing a high-quality AlN template on sapphire substrate are described. The maximum output powers are 8.6 mW and 5.5 mW at an injection current of less than 150 mA, at the emission wavelength of 350 nm and 340 nm, respectively. The highest external quantum efficiencies are 2.2 and 1.7 %, respectively. The application to white lighting and the potential of the high-flux UV-extraction utilizing bulk AlN substrate are also investigated.
AB - The potential of high power extraction from AlGaN-based ultraviolet light emitting diodes (UV-LEDs) is described. Improvements of UV-LEDs are shortly introduced from the viewpoints of nitride epitaxial growth, heterostracture optical characteristics based on the internal polarization field, and p-n junction design. The UV light extraction enhancement by utilizing the GaN-free transparent UV-LED structure and highly efficient UV-LEDs fabricated by introducing a high-quality AlN template on sapphire substrate are described. The maximum output powers are 8.6 mW and 5.5 mW at an injection current of less than 150 mA, at the emission wavelength of 350 nm and 340 nm, respectively. The highest external quantum efficiencies are 2.2 and 1.7 %, respectively. The application to white lighting and the potential of the high-flux UV-extraction utilizing bulk AlN substrate are also investigated.
KW - AIN
KW - Dislocation
KW - Extraction
KW - Light emitting diode
KW - Ultraviolet
UR - http://www.scopus.com/inward/record.url?scp=4344670528&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4344670528&partnerID=8YFLogxK
U2 - 10.1117/12.524560
DO - 10.1117/12.524560
M3 - Conference contribution
AN - SCOPUS:4344670528
VL - 5359
SP - 387
EP - 399
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Razeghi, M.
A2 - Brown, G.J.
ER -