High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

T. Tanaka, Toshihiro Kawano, T. Kajimura

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Self-sustained pulsating optical power and kink level in AlGaAs semiconductor lasers are remarkably improved by introducing a multiquantum well (MQW) structure in the active layer. Stable fundamental transverse mode operation at output power up to 50 mW and self-sustained pulsation at output power up to 40 mW are obtained simultaneously for MQW lasers with antireflective and high-reflective coatings on the facets. Low-noise characteristics (relative intensity noise of less than 10-13 Hz -1 under 3-4% optical feedback) are obtained in the output power range from 7 to 17 mW in MQW lasers with high-reflective coating on the rear facet. These results suggest that low-noise high-power characteristics can be achieved in self-sustained pulsating lasers with a MQW active layer.

Original languageEnglish
Pages (from-to)2471-2473
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number25
DOIs
Publication statusPublished - 1988
Externally publishedYes

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aluminum gallium arsenides
semiconductor lasers
low noise
flat surfaces
output
lasers
coatings
noise intensity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer. / Tanaka, T.; Kawano, Toshihiro; Kajimura, T.

In: Applied Physics Letters, Vol. 53, No. 25, 1988, p. 2471-2473.

Research output: Contribution to journalArticle

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