High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors

K. Kumakura, Y. Yamauchi, Toshiki Makimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

We fabricated a Pnp AlGaN/GaN heterojunction bipolar transistor and investigated its common - emitter current - voltage characteristics at room temperature. The device structures were grown by metalorganic vapor phase epitaxy on the sapphire substrates. The buffer layer was a newly developed Al 2O 3/AlN/AlON/ Al 2O 3, resulting in the dislocation density of 6 × 10 8 cm -2 in MOVPE-grown GaN layer. This relatively low dislocation density led to the high voltage operation in the devices, corresponding to the breakdown field of 2.4 MV/cm. AlGaN/(Al)GaN superlattices were applied to the emitter and subcollector to increase the hole concentrations in these layers. An n-type GaN base width was 80 nm. The sheet resistivity and the specific contact resistance were 900 Ω/square and 2.6 × 10 -5 Ω-cm 2 for a 80 nm base, respectively. The base sheet resistivity of Pnp AlGaN/GaN HBT was two orders of magnitude smaller than that of Npn AlGaN/GaN HBTs. The maximum current gain was 8 at the collector current of 11.5 mA for the 30 μm × 50 μm device. It operated at the collector current of 20 mA at the collector - emitter voltage of 65 V with a current gain of 5. The corresponding current density and power density were 1.3 kA/cm 2 and 84.5 kW/cm 2. High power operation was achieved by using the relatively low dislocation density GaN and low resistance superlattices.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2589-2592
Number of pages4
Volume2
Edition7
DOIs
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

bipolar transistors
heterojunctions
accumulators
emitters
superlattices
electrical resistivity
low resistance
electric potential
contact resistance
vapor phase epitaxy
radiant flux density
high voltages
sapphire
buffers
breakdown
current density
room temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Kumakura, K., Yamauchi, Y., & Makimoto, T. (2005). High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors. In Physica Status Solidi C: Conferences (7 ed., Vol. 2, pp. 2589-2592) https://doi.org/10.1002/pssc.200461395

High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors. / Kumakura, K.; Yamauchi, Y.; Makimoto, Toshiki.

Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. p. 2589-2592.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kumakura, K, Yamauchi, Y & Makimoto, T 2005, High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors. in Physica Status Solidi C: Conferences. 7 edn, vol. 2, pp. 2589-2592. https://doi.org/10.1002/pssc.200461395
Kumakura K, Yamauchi Y, Makimoto T. High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors. In Physica Status Solidi C: Conferences. 7 ed. Vol. 2. 2005. p. 2589-2592 https://doi.org/10.1002/pssc.200461395
Kumakura, K. ; Yamauchi, Y. ; Makimoto, Toshiki. / High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors. Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. pp. 2589-2592
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