High-power operation of self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

Toshiaki Tanaka, Toshihiro Kawano, Takashi Kajimura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Improvement of kink level in self-sustained pulsating multiquantum well lasers is mainly examined by controlling the built-in refractive index difference parallel to the junction. Furthermore, it is shown that the offset power level of self-pulsation is suppressed by increasing the effective refractive index difference. Kink level can be improved to over 30 mW in lasers without facet coatings. Relative intensity noise of 10-13 Hz-1 under optical feedback of 3-4% is also attained from 4 to 7 mW. With antireflective and reflective facet coatings, stable transverse-mode operation over 70 mW is achieved.

Original languageEnglish
Pages (from-to)2078-2080
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume28
Issue number11
Publication statusPublished - 1989 Nov
Externally publishedYes

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aluminum gallium arsenides
Semiconductor lasers
Refractive index
semiconductor lasers
Reflective coatings
Optical feedback
Lasers
flat surfaces
refractivity
coatings
noise intensity
Coatings
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Improvement of kink level in self-sustained pulsating multiquantum well lasers is mainly examined by controlling the built-in refractive index difference parallel to the junction. Furthermore, it is shown that the offset power level of self-pulsation is suppressed by increasing the effective refractive index difference. Kink level can be improved to over 30 mW in lasers without facet coatings. Relative intensity noise of 10-13 Hz-1 under optical feedback of 3-4{\%} is also attained from 4 to 7 mW. With antireflective and reflective facet coatings, stable transverse-mode operation over 70 mW is achieved.",
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