High-power operation of self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

Toshiaki Tanaka, Toshihiro Kawano, Takashi Kajimura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Improvement of kink level in self-sustained pulsating multiquantum well (MQW) lasers is mainly examined by controlling the built-in refractive index difference parallel to the junction. Furthermore, it is shown that the offset power level of self-pulsation is suppressed by increasing the effective refractive index difference. Kink level can be improved to over 30 mW in lasers without facet coatings. Relative intensity noise of 10−13 Hz−1 under optical feedback of 3∼4% is also attained from 4 to 7 mW. With antireflective and reflective facet coatings, stable transverse-mode operation over 70 mW is achieved.

Original languageEnglish
Pages (from-to)L2078-L2080
JournalJapanese journal of applied physics
Volume28
Issue number11 A
DOIs
Publication statusPublished - 1989 Nov

Keywords

  • High-power low-noise characteristics
  • Kink level
  • MQW active layer
  • Self-sustained pulsating semiconductor laser

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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