High-preformance diamond surface-channel field-effect transistors and their operation mechanism

K. Tsugawa, K. Kitatani, H. Noda, A. Hokazono, K. Hirose, M. Tajima, Hiroshi Kawarada

Research output: Contribution to journalArticle

89 Citations (Scopus)

Abstract

Metal-semiconductor (MES) field-effect transistors (FETs) and metal oxide-semiconductor (MOS) FETs are fabricated using p-type conductive layers on hydrogen-terminated diamond surfaces. The FETs exhibit complete channel pinch-off and drain-current saturation. Both enhancement-mode and depletion-mode MESFETs are realized, the threshold voltage of which is controlled by changing the electronegativity of the gate metal. The MOSFETs, using evaporated SiOx as gate insulators, operate in depletion mode. The best transconductance of each type of FET exceeds 10 mS mm-1 with a gate length of 3-7 μm. The DC performance of the diamond FETs is evaluated by two-dimensional device simulations, varying the distribution depth of the acceptors. In the simulations, a distribution depth of less than 1 nm or the two-dimensional acceptor distribution on the surface reproduces well the actual DC characteristics. In this case, the hole concentration at a depth of 10 nm is decreased by three orders of magnitude as compared to that at the surface. This thin surface channel realizes enhancement-mode operation in MESFETs. Hydrogen-terminated diamond surfaces can already be equipped with FETs with shallow junction depths of less than 10 nm, which is necessary for short gate lengths such as 50 nm. Microfabrication technology on hydrogen-terminated diamond surfaces may give rise to a new field of nanoscale devices.

Original languageEnglish
Pages (from-to)927-933
Number of pages7
JournalDiamond and Related Materials
Volume8
Issue number2-5
Publication statusPublished - 1999 Mar
Externally publishedYes

Fingerprint

Diamond
Field effect transistors
Diamonds
field effect transistors
diamonds
Hydrogen
MESFET devices
Hole concentration
Electronegativity
Microfabrication
Drain current
depletion
Transconductance
MOSFET devices
hydrogen
direct current
Threshold voltage
augmentation
Metals
transconductance

Keywords

  • Diamond
  • Hydrogen-terminated surface
  • MESFET
  • MOSFET
  • P-Type surface conductive layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Tsugawa, K., Kitatani, K., Noda, H., Hokazono, A., Hirose, K., Tajima, M., & Kawarada, H. (1999). High-preformance diamond surface-channel field-effect transistors and their operation mechanism. Diamond and Related Materials, 8(2-5), 927-933.

High-preformance diamond surface-channel field-effect transistors and their operation mechanism. / Tsugawa, K.; Kitatani, K.; Noda, H.; Hokazono, A.; Hirose, K.; Tajima, M.; Kawarada, Hiroshi.

In: Diamond and Related Materials, Vol. 8, No. 2-5, 03.1999, p. 927-933.

Research output: Contribution to journalArticle

Tsugawa, K, Kitatani, K, Noda, H, Hokazono, A, Hirose, K, Tajima, M & Kawarada, H 1999, 'High-preformance diamond surface-channel field-effect transistors and their operation mechanism', Diamond and Related Materials, vol. 8, no. 2-5, pp. 927-933.
Tsugawa K, Kitatani K, Noda H, Hokazono A, Hirose K, Tajima M et al. High-preformance diamond surface-channel field-effect transistors and their operation mechanism. Diamond and Related Materials. 1999 Mar;8(2-5):927-933.
Tsugawa, K. ; Kitatani, K. ; Noda, H. ; Hokazono, A. ; Hirose, K. ; Tajima, M. ; Kawarada, Hiroshi. / High-preformance diamond surface-channel field-effect transistors and their operation mechanism. In: Diamond and Related Materials. 1999 ; Vol. 8, No. 2-5. pp. 927-933.
@article{3e1ae4f78fc54c76991bb30159a45870,
title = "High-preformance diamond surface-channel field-effect transistors and their operation mechanism",
abstract = "Metal-semiconductor (MES) field-effect transistors (FETs) and metal oxide-semiconductor (MOS) FETs are fabricated using p-type conductive layers on hydrogen-terminated diamond surfaces. The FETs exhibit complete channel pinch-off and drain-current saturation. Both enhancement-mode and depletion-mode MESFETs are realized, the threshold voltage of which is controlled by changing the electronegativity of the gate metal. The MOSFETs, using evaporated SiOx as gate insulators, operate in depletion mode. The best transconductance of each type of FET exceeds 10 mS mm-1 with a gate length of 3-7 μm. The DC performance of the diamond FETs is evaluated by two-dimensional device simulations, varying the distribution depth of the acceptors. In the simulations, a distribution depth of less than 1 nm or the two-dimensional acceptor distribution on the surface reproduces well the actual DC characteristics. In this case, the hole concentration at a depth of 10 nm is decreased by three orders of magnitude as compared to that at the surface. This thin surface channel realizes enhancement-mode operation in MESFETs. Hydrogen-terminated diamond surfaces can already be equipped with FETs with shallow junction depths of less than 10 nm, which is necessary for short gate lengths such as 50 nm. Microfabrication technology on hydrogen-terminated diamond surfaces may give rise to a new field of nanoscale devices.",
keywords = "Diamond, Hydrogen-terminated surface, MESFET, MOSFET, P-Type surface conductive layer",
author = "K. Tsugawa and K. Kitatani and H. Noda and A. Hokazono and K. Hirose and M. Tajima and Hiroshi Kawarada",
year = "1999",
month = "3",
language = "English",
volume = "8",
pages = "927--933",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "2-5",

}

TY - JOUR

T1 - High-preformance diamond surface-channel field-effect transistors and their operation mechanism

AU - Tsugawa, K.

AU - Kitatani, K.

AU - Noda, H.

AU - Hokazono, A.

AU - Hirose, K.

AU - Tajima, M.

AU - Kawarada, Hiroshi

PY - 1999/3

Y1 - 1999/3

N2 - Metal-semiconductor (MES) field-effect transistors (FETs) and metal oxide-semiconductor (MOS) FETs are fabricated using p-type conductive layers on hydrogen-terminated diamond surfaces. The FETs exhibit complete channel pinch-off and drain-current saturation. Both enhancement-mode and depletion-mode MESFETs are realized, the threshold voltage of which is controlled by changing the electronegativity of the gate metal. The MOSFETs, using evaporated SiOx as gate insulators, operate in depletion mode. The best transconductance of each type of FET exceeds 10 mS mm-1 with a gate length of 3-7 μm. The DC performance of the diamond FETs is evaluated by two-dimensional device simulations, varying the distribution depth of the acceptors. In the simulations, a distribution depth of less than 1 nm or the two-dimensional acceptor distribution on the surface reproduces well the actual DC characteristics. In this case, the hole concentration at a depth of 10 nm is decreased by three orders of magnitude as compared to that at the surface. This thin surface channel realizes enhancement-mode operation in MESFETs. Hydrogen-terminated diamond surfaces can already be equipped with FETs with shallow junction depths of less than 10 nm, which is necessary for short gate lengths such as 50 nm. Microfabrication technology on hydrogen-terminated diamond surfaces may give rise to a new field of nanoscale devices.

AB - Metal-semiconductor (MES) field-effect transistors (FETs) and metal oxide-semiconductor (MOS) FETs are fabricated using p-type conductive layers on hydrogen-terminated diamond surfaces. The FETs exhibit complete channel pinch-off and drain-current saturation. Both enhancement-mode and depletion-mode MESFETs are realized, the threshold voltage of which is controlled by changing the electronegativity of the gate metal. The MOSFETs, using evaporated SiOx as gate insulators, operate in depletion mode. The best transconductance of each type of FET exceeds 10 mS mm-1 with a gate length of 3-7 μm. The DC performance of the diamond FETs is evaluated by two-dimensional device simulations, varying the distribution depth of the acceptors. In the simulations, a distribution depth of less than 1 nm or the two-dimensional acceptor distribution on the surface reproduces well the actual DC characteristics. In this case, the hole concentration at a depth of 10 nm is decreased by three orders of magnitude as compared to that at the surface. This thin surface channel realizes enhancement-mode operation in MESFETs. Hydrogen-terminated diamond surfaces can already be equipped with FETs with shallow junction depths of less than 10 nm, which is necessary for short gate lengths such as 50 nm. Microfabrication technology on hydrogen-terminated diamond surfaces may give rise to a new field of nanoscale devices.

KW - Diamond

KW - Hydrogen-terminated surface

KW - MESFET

KW - MOSFET

KW - P-Type surface conductive layer

UR - http://www.scopus.com/inward/record.url?scp=0032615292&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032615292&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032615292

VL - 8

SP - 927

EP - 933

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 2-5

ER -