High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

K. Ueda, M. Kasu, Toshiki Makimoto

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The authors show that high-pressure and high-temperature (HPHT) annealing is very effective for the activation of ion-implanted dopants in diamond. The HPHT annealing condition is located in the thermodynamically stable region for diamond in the phase diagram and is, therefore, much more efficient for the recovery of implantation-induced damage and for the activation of ion-implanted dopants than thermal annealing in vacuum. The B-implanted film after HPHT annealing showed a high mobility of 632 cm2 V s with a sheet hole concentration of 4.8× 1010 cm-2 at 300 K and the doping efficiency of ∼7%. The mobility is the highest so far for ion-implanted diamond. In the entire annealing temperature range, the HPHT annealing is more efficient than the thermal annealing in vacuum.

Original languageEnglish
Article number122102
JournalApplied Physics Letters
Volume90
Issue number12
DOIs
Publication statusPublished - 2007
Externally publishedYes

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diamonds
activation
annealing
ions
vacuum
implantation
recovery
phase diagrams
damage
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond. / Ueda, K.; Kasu, M.; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 90, No. 12, 122102, 2007.

Research output: Contribution to journalArticle

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