High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

K. Ueda, M. Kasu, Toshiki Makimoto

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The authors show that high-pressure and high-temperature (HPHT) annealing is very effective for the activation of ion-implanted dopants in diamond. The HPHT annealing condition is located in the thermodynamically stable region for diamond in the phase diagram and is, therefore, much more efficient for the recovery of implantation-induced damage and for the activation of ion-implanted dopants than thermal annealing in vacuum. The B-implanted film after HPHT annealing showed a high mobility of 632 cm2 V s with a sheet hole concentration of 4.8× 1010 cm-2 at 300 K and the doping efficiency of ∼7%. The mobility is the highest so far for ion-implanted diamond. In the entire annealing temperature range, the HPHT annealing is more efficient than the thermal annealing in vacuum.

Original languageEnglish
Article number122102
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2007
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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