High-pressure and high-temperature annealing effects of boron-implanted diamond

K. Ueda*, M. Kasu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We show that high-pressure and high-temperature (HPHT) annealing of ion-implanted diamond is efficient as a doping technique. The HPHT annealing condition is located in the thermodynamically stable region for diamond. The HPHT annealing is highly effective for the recovery of damage induced by ion implantation. In the entire annealing temperature range, the HPHT annealing is more efficient than conventional thermal annealing methods such as vacuum annealing. At 1400 °C, we obtained the highest boron doping efficiency of 7.1%, which is ten times higher than that by vacuum annealing.

Original languageEnglish
Pages (from-to)502-505
Number of pages4
JournalDiamond and Related Materials
Volume17
Issue number4-5
DOIs
Publication statusPublished - 2008 Apr
Externally publishedYes

Keywords

  • Diamond
  • Doping
  • High-pressure and high-temperature annealing
  • Ion-implantation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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