High-pressure and high-temperature annealing effects of boron-implanted diamond

K. Ueda; M. Kasu

doi:10.1016/j.diamond.2007.12.017

High-pressure and high-temperature annealing effects of boron-implanted diamond

K. Ueda^*, M. Kasu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We show that high-pressure and high-temperature (HPHT) annealing of ion-implanted diamond is efficient as a doping technique. The HPHT annealing condition is located in the thermodynamically stable region for diamond. The HPHT annealing is highly effective for the recovery of damage induced by ion implantation. In the entire annealing temperature range, the HPHT annealing is more efficient than conventional thermal annealing methods such as vacuum annealing. At 1400 °C, we obtained the highest boron doping efficiency of 7.1%, which is ten times higher than that by vacuum annealing.

Original language	English
Pages (from-to)	502-505
Number of pages	4
Journal	Diamond and Related Materials
Volume	17
Issue number	4-5
DOIs	https://doi.org/10.1016/j.diamond.2007.12.017
Publication status	Published - 2008 Apr
Externally published	Yes

Keywords

Diamond
Doping
High-pressure and high-temperature annealing
Ion-implantation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2007.12.017

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abstract = "We show that high-pressure and high-temperature (HPHT) annealing of ion-implanted diamond is efficient as a doping technique. The HPHT annealing condition is located in the thermodynamically stable region for diamond. The HPHT annealing is highly effective for the recovery of damage induced by ion implantation. In the entire annealing temperature range, the HPHT annealing is more efficient than conventional thermal annealing methods such as vacuum annealing. At 1400 °C, we obtained the highest boron doping efficiency of 7.1%, which is ten times higher than that by vacuum annealing.",

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AU - Ueda, K.

AU - Kasu, M.

PY - 2008/4

Y1 - 2008/4

N2 - We show that high-pressure and high-temperature (HPHT) annealing of ion-implanted diamond is efficient as a doping technique. The HPHT annealing condition is located in the thermodynamically stable region for diamond. The HPHT annealing is highly effective for the recovery of damage induced by ion implantation. In the entire annealing temperature range, the HPHT annealing is more efficient than conventional thermal annealing methods such as vacuum annealing. At 1400 °C, we obtained the highest boron doping efficiency of 7.1%, which is ten times higher than that by vacuum annealing.

AB - We show that high-pressure and high-temperature (HPHT) annealing of ion-implanted diamond is efficient as a doping technique. The HPHT annealing condition is located in the thermodynamically stable region for diamond. The HPHT annealing is highly effective for the recovery of damage induced by ion implantation. In the entire annealing temperature range, the HPHT annealing is more efficient than conventional thermal annealing methods such as vacuum annealing. At 1400 °C, we obtained the highest boron doping efficiency of 7.1%, which is ten times higher than that by vacuum annealing.

KW - Diamond

KW - Doping

KW - High-pressure and high-temperature annealing

KW - Ion-implantation

UR - http://www.scopus.com/inward/record.url?scp=42949164077&partnerID=8YFLogxK

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M3 - Article

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SN - 0925-9635

VL - 17

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EP - 505

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 4-5

ER -

High-pressure and high-temperature annealing effects of boron-implanted diamond

Abstract

Keywords

ASJC Scopus subject areas

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