High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films

K. Ueda; M. Kasu; A. Tallaire; T. Makimoto

doi:10.1016/j.diamond.2006.07.023

High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films

K. Ueda^*, M. Kasu, A. Tallaire, T. Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

High-pressure and high-temperature (HPHT) annealing effects on the chemical vapor-deposited (CVD) homoepitaxial diamond films were investigated. By the HPHT annealing, the intensity of free-exciton (FE)-related emission was increased by ∼ 2 times and the luminescence bands from 270 to 320 nm, which originate from 5RL and 2BD bands, were almost completely eliminated in the cathodoluminescence (CL) spectrum. The CL intensity of band-A emission, which is related to crystal defects in diamond, was also decreased. The hole mobility at room temperature was increased from 826 to 1030 cm²/Vs by HPHT annealing. These results suggest that HPHT annealing decreases the crystalline defects and improves the optical and electronic properties of homoepitaxial diamond films.

Original language	English
Pages (from-to)	1789-1791
Number of pages	3
Journal	Diamond and Related Materials
Volume	15
Issue number	11-12 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.diamond.2006.07.023
Publication status	Published - 2006 Nov
Externally published	Yes

Keywords

Annealing
CVD
Diamond films
High-pressure and high-temperature

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Physics and Astronomy(all)
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2006.07.023

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@article{0045e7969f114761ae221ebf2a675d9f,

title = "High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films",

abstract = "High-pressure and high-temperature (HPHT) annealing effects on the chemical vapor-deposited (CVD) homoepitaxial diamond films were investigated. By the HPHT annealing, the intensity of free-exciton (FE)-related emission was increased by ∼ 2 times and the luminescence bands from 270 to 320 nm, which originate from 5RL and 2BD bands, were almost completely eliminated in the cathodoluminescence (CL) spectrum. The CL intensity of band-A emission, which is related to crystal defects in diamond, was also decreased. The hole mobility at room temperature was increased from 826 to 1030 cm2/Vs by HPHT annealing. These results suggest that HPHT annealing decreases the crystalline defects and improves the optical and electronic properties of homoepitaxial diamond films.",

keywords = "Annealing, CVD, Diamond films, High-pressure and high-temperature",

author = "K. Ueda and M. Kasu and A. Tallaire and T. Makimoto",

note = "Funding Information: The authors thank Drs. K. Torimitsu and J. Yumoto (NTT Basic Research Laboratories) for their support and encouragement throughout the course of this study. The authors owe special thanks to Prof. Erhard Kohn (University of Ulm, Germany) for his continuous suggestions throughout our work. This work was partly supported by the SCOPE project of the Ministry of Internal Affairs and Communications, Japan.",

year = "2006",

month = nov,

doi = "10.1016/j.diamond.2006.07.023",

language = "English",

volume = "15",

pages = "1789--1791",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "11-12 SPEC. ISS.",

}

TY - JOUR

T1 - High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films

AU - Ueda, K.

AU - Kasu, M.

AU - Tallaire, A.

AU - Makimoto, T.

N1 - Funding Information: The authors thank Drs. K. Torimitsu and J. Yumoto (NTT Basic Research Laboratories) for their support and encouragement throughout the course of this study. The authors owe special thanks to Prof. Erhard Kohn (University of Ulm, Germany) for his continuous suggestions throughout our work. This work was partly supported by the SCOPE project of the Ministry of Internal Affairs and Communications, Japan.

PY - 2006/11

Y1 - 2006/11

N2 - High-pressure and high-temperature (HPHT) annealing effects on the chemical vapor-deposited (CVD) homoepitaxial diamond films were investigated. By the HPHT annealing, the intensity of free-exciton (FE)-related emission was increased by ∼ 2 times and the luminescence bands from 270 to 320 nm, which originate from 5RL and 2BD bands, were almost completely eliminated in the cathodoluminescence (CL) spectrum. The CL intensity of band-A emission, which is related to crystal defects in diamond, was also decreased. The hole mobility at room temperature was increased from 826 to 1030 cm2/Vs by HPHT annealing. These results suggest that HPHT annealing decreases the crystalline defects and improves the optical and electronic properties of homoepitaxial diamond films.

AB - High-pressure and high-temperature (HPHT) annealing effects on the chemical vapor-deposited (CVD) homoepitaxial diamond films were investigated. By the HPHT annealing, the intensity of free-exciton (FE)-related emission was increased by ∼ 2 times and the luminescence bands from 270 to 320 nm, which originate from 5RL and 2BD bands, were almost completely eliminated in the cathodoluminescence (CL) spectrum. The CL intensity of band-A emission, which is related to crystal defects in diamond, was also decreased. The hole mobility at room temperature was increased from 826 to 1030 cm2/Vs by HPHT annealing. These results suggest that HPHT annealing decreases the crystalline defects and improves the optical and electronic properties of homoepitaxial diamond films.

KW - Annealing

KW - CVD

KW - Diamond films

KW - High-pressure and high-temperature

UR - http://www.scopus.com/inward/record.url?scp=33751194108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751194108&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2006.07.023

DO - 10.1016/j.diamond.2006.07.023

M3 - Article

AN - SCOPUS:33751194108

SN - 0925-9635

VL - 15

SP - 1789

EP - 1791

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 11-12 SPEC. ISS.

ER -

High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films

Abstract

Keywords

ASJC Scopus subject areas

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