High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films

K. Ueda, M. Kasu, A. Tallaire, Toshiki Makimoto

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

High-pressure and high-temperature (HPHT) annealing effects on the chemical vapor-deposited (CVD) homoepitaxial diamond films were investigated. By the HPHT annealing, the intensity of free-exciton (FE)-related emission was increased by ∼ 2 times and the luminescence bands from 270 to 320 nm, which originate from 5RL and 2BD bands, were almost completely eliminated in the cathodoluminescence (CL) spectrum. The CL intensity of band-A emission, which is related to crystal defects in diamond, was also decreased. The hole mobility at room temperature was increased from 826 to 1030 cm2/Vs by HPHT annealing. These results suggest that HPHT annealing decreases the crystalline defects and improves the optical and electronic properties of homoepitaxial diamond films.

Original languageEnglish
Pages (from-to)1789-1791
Number of pages3
JournalDiamond and Related Materials
Volume15
Issue number11-12 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Nov
Externally publishedYes

Fingerprint

Diamond films
diamond films
Vapors
Annealing
vapors
annealing
cathodoluminescence
Cathodoluminescence
Temperature
hole mobility
Diamond
Hole mobility
crystal defects
Crystal defects
Excitons
Electronic properties
diamonds
excitons
luminescence
Luminescence

Keywords

  • Annealing
  • CVD
  • Diamond films
  • High-pressure and high-temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films. / Ueda, K.; Kasu, M.; Tallaire, A.; Makimoto, Toshiki.

In: Diamond and Related Materials, Vol. 15, No. 11-12 SPEC. ISS., 11.2006, p. 1789-1791.

Research output: Contribution to journalArticle

Ueda, K. ; Kasu, M. ; Tallaire, A. ; Makimoto, Toshiki. / High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films. In: Diamond and Related Materials. 2006 ; Vol. 15, No. 11-12 SPEC. ISS. pp. 1789-1791.
@article{0045e7969f114761ae221ebf2a675d9f,
title = "High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films",
abstract = "High-pressure and high-temperature (HPHT) annealing effects on the chemical vapor-deposited (CVD) homoepitaxial diamond films were investigated. By the HPHT annealing, the intensity of free-exciton (FE)-related emission was increased by ∼ 2 times and the luminescence bands from 270 to 320 nm, which originate from 5RL and 2BD bands, were almost completely eliminated in the cathodoluminescence (CL) spectrum. The CL intensity of band-A emission, which is related to crystal defects in diamond, was also decreased. The hole mobility at room temperature was increased from 826 to 1030 cm2/Vs by HPHT annealing. These results suggest that HPHT annealing decreases the crystalline defects and improves the optical and electronic properties of homoepitaxial diamond films.",
keywords = "Annealing, CVD, Diamond films, High-pressure and high-temperature",
author = "K. Ueda and M. Kasu and A. Tallaire and Toshiki Makimoto",
year = "2006",
month = "11",
doi = "10.1016/j.diamond.2006.07.023",
language = "English",
volume = "15",
pages = "1789--1791",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "11-12 SPEC. ISS.",

}

TY - JOUR

T1 - High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films

AU - Ueda, K.

AU - Kasu, M.

AU - Tallaire, A.

AU - Makimoto, Toshiki

PY - 2006/11

Y1 - 2006/11

N2 - High-pressure and high-temperature (HPHT) annealing effects on the chemical vapor-deposited (CVD) homoepitaxial diamond films were investigated. By the HPHT annealing, the intensity of free-exciton (FE)-related emission was increased by ∼ 2 times and the luminescence bands from 270 to 320 nm, which originate from 5RL and 2BD bands, were almost completely eliminated in the cathodoluminescence (CL) spectrum. The CL intensity of band-A emission, which is related to crystal defects in diamond, was also decreased. The hole mobility at room temperature was increased from 826 to 1030 cm2/Vs by HPHT annealing. These results suggest that HPHT annealing decreases the crystalline defects and improves the optical and electronic properties of homoepitaxial diamond films.

AB - High-pressure and high-temperature (HPHT) annealing effects on the chemical vapor-deposited (CVD) homoepitaxial diamond films were investigated. By the HPHT annealing, the intensity of free-exciton (FE)-related emission was increased by ∼ 2 times and the luminescence bands from 270 to 320 nm, which originate from 5RL and 2BD bands, were almost completely eliminated in the cathodoluminescence (CL) spectrum. The CL intensity of band-A emission, which is related to crystal defects in diamond, was also decreased. The hole mobility at room temperature was increased from 826 to 1030 cm2/Vs by HPHT annealing. These results suggest that HPHT annealing decreases the crystalline defects and improves the optical and electronic properties of homoepitaxial diamond films.

KW - Annealing

KW - CVD

KW - Diamond films

KW - High-pressure and high-temperature

UR - http://www.scopus.com/inward/record.url?scp=33751194108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751194108&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2006.07.023

DO - 10.1016/j.diamond.2006.07.023

M3 - Article

AN - SCOPUS:33751194108

VL - 15

SP - 1789

EP - 1791

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 11-12 SPEC. ISS.

ER -