High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films

K. Ueda, M. Kasu, A. Tallaire, T. Makimoto

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13 Citations (Scopus)

Abstract

High-pressure and high-temperature (HPHT) annealing effects on the chemical vapor-deposited (CVD) homoepitaxial diamond films were investigated. By the HPHT annealing, the intensity of free-exciton (FE)-related emission was increased by ∼ 2 times and the luminescence bands from 270 to 320 nm, which originate from 5RL and 2BD bands, were almost completely eliminated in the cathodoluminescence (CL) spectrum. The CL intensity of band-A emission, which is related to crystal defects in diamond, was also decreased. The hole mobility at room temperature was increased from 826 to 1030 cm2/Vs by HPHT annealing. These results suggest that HPHT annealing decreases the crystalline defects and improves the optical and electronic properties of homoepitaxial diamond films.

Original languageEnglish
Pages (from-to)1789-1791
Number of pages3
JournalDiamond and Related Materials
Volume15
Issue number11-12 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Nov 1

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Keywords

  • Annealing
  • CVD
  • Diamond films
  • High-pressure and high-temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

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