High-pressure and high-temperature annealing of diamond ion-implanted with various elements

K. Ueda*, M. Kasu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We tried to dope various ions (B, Al, Ga, Mg, and Be) into diamond films by combining ion-implantation and high-pressure and high-temperature annealing. In cathodoluminescence spectra of Be-implanted films, previously unreported emissions appeared at 4.843, 4.687, 4.533 eV. These emissions were only observed from Be-implanted films, and they were not observed from B, Al, Ga, and Mg-implanted ones. The 4.843-eV line is assigned to zero phonon line, and the 4.687- and 4.533-eV lines are its phonon replicas because the energy difference between each peak is close to the optical phonon energy of diamond (~ 0.15 eV). The temperature dependence of the 4.843-eV line is similar to that of bound excitons.

Original languageEnglish
Pages (from-to)1269-1272
Number of pages4
JournalDiamond and Related Materials
Volume17
Issue number7-10
DOIs
Publication statusPublished - 2008 Jul
Externally publishedYes

Keywords

  • Beryllium
  • Diamond
  • High-pressure and high-temperature
  • Ion-implantation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

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