High purity ozone oxidation on hydrogen passivated silicon surface

A. Kurokawa, Shingo Ichimura

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

High purity ozone was used to oxidize hydrogen passivated Si(111) surface. Initial oxide formation was investigated with X-ray photoelectron spectroscopy. The ozone oxidation was disturbed when the surface was gradually covered with hydrogen and finally the rate of oxide formation was reduced to one tenth when the surface was completely covered with hydrogen. This reduction rate is very small compared to the reduction rate for oxygen exposure which is reported to be 1012. Ozone oxidation still proceeds on the hydrogen passivated surface where oxygen molecule does not adsorb at all. Three backbonds of a Si atom are changed to Si-O-Si bridges simultaneously when ozone oxidation proceeds on the hydrogen passivated surface.

Original languageEnglish
Pages (from-to)436-439
Number of pages4
JournalApplied Surface Science
Volume100-101
DOIs
Publication statusPublished - 1996 Jul 1
Externally publishedYes

Fingerprint

Ozone
Silicon
Hydrogen
Oxidation
Oxides
Oxygen
X ray photoelectron spectroscopy
Atoms
Molecules

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

High purity ozone oxidation on hydrogen passivated silicon surface. / Kurokawa, A.; Ichimura, Shingo.

In: Applied Surface Science, Vol. 100-101, 01.07.1996, p. 436-439.

Research output: Contribution to journalArticle

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