High-Quality AgGaTe2 Layers on Si Substrates with Ag2Te Buffer Layers

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    AgGaTe2 layers were successfully grown on Si substrates by the close-spaced sublimation method. The Si substrates were confirmed to be etched during AgGaTe2 layer growth when the layer was grown directly on the substrate. To eliminate melt-back etching, a buffer layer of Ag2Te was introduced. It was found that the Ag2Te buffer layer changed into the AgGaTe2 layer during the growth process, and a uniform AgGaTe2 layer with an abrupt interface was formed. Both the diffusion of Ga into Ag2Te and the growth of AgGaTe2 occurred simultaneously. It was confirmed that uniform AgGaTe2 layers could be formed without any traces of the Ag2Te layer or melt-back etching by tuning the growth parameters. A solar cell was also fabricated using the p-AgGaTe2/n-Si heterojunction. This solar cell showed conversion efficiency of approximately 3%.

    Original languageEnglish
    Pages (from-to)1-5
    Number of pages5
    JournalJournal of Electronic Materials
    DOIs
    Publication statusAccepted/In press - 2016 May 2

    Fingerprint

    Buffer layers
    buffers
    Substrates
    Etching
    Solar cells
    Sublimation
    Conversion efficiency
    Heterojunctions
    Tuning
    solar cells
    etching
    sublimation
    heterojunctions
    tuning

    Keywords

    • AgGaTe
    • Chalcopyrite
    • close-spaced sublimation
    • solar cell

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    High-Quality AgGaTe2 Layers on Si Substrates with Ag2Te Buffer Layers. / Uruno, Aya; Kobayashi, Masakazu.

    In: Journal of Electronic Materials, 02.05.2016, p. 1-5.

    Research output: Contribution to journalArticle

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