High quality gate dielectric film on poly-silicon grown at room temperature using UV light excited ozone

N. Kameda*, T. Nishiguchi, Y. Morikawa, M. Kekura, H. Nonaka, S. Ichimura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Fingerprint

Dive into the research topics of 'High quality gate dielectric film on poly-silicon grown at room temperature using UV light excited ozone'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds