High-quality lowest-loss-mode lasing in GaAs quasi-stadium laser diodes having unstable resonators

Takehiro Fukushima, Tomoko Tanaka, Takahisa Harayama

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We obtained high-quality lowest-loss-mode lasing in quasi-stadium laser diodes having unstable resonators that consisted of two curved end mirrors and two straight sidewall mirrors. The laser diodes were fabricated by applying a reactive ion etching technique to a metal-organic chemical-vapor deposition-grown graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs structure. The electrode contact area of the laser diodes was formed along unstable periodic orbits, along which the optical beams are localized. Highly directional fan-out beams corresponding to the numerically obtained lowest loss mode were emitted from the end mirrors under CW operation at room temperature.

Original languageEnglish
Pages (from-to)3397-3399
Number of pages3
JournalOptics Letters
Volume32
Issue number23
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes

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lasing
resonators
semiconductor lasers
mirrors
fans
metalorganic chemical vapor deposition
aluminum gallium arsenides
etching
quantum wells
orbits
electrodes
room temperature
ions

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

High-quality lowest-loss-mode lasing in GaAs quasi-stadium laser diodes having unstable resonators. / Fukushima, Takehiro; Tanaka, Tomoko; Harayama, Takahisa.

In: Optics Letters, Vol. 32, No. 23, 01.12.2007, p. 3397-3399.

Research output: Contribution to journalArticle

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