High-quality Zn-diffused InP-related materials fabricated by the open-tube technique

T. Tsuchiya, T. Taniwatari, T. Haga, Toshihiro Kawano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In0.47Ga0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In0.47Ga0.53As well layers and InP barrier layers occur, even for very thin layers.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
PublisherIEEE
Pages664-667
Number of pages4
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 1995 May 91995 May 13

Other

OtherProceedings of the 7th International Conference on Indium Phosphide and Related Materials
CitySapporo, Jpn
Period95/5/995/5/13

Fingerprint

Semiconductor quantum wells
Photoluminescence
tubes
Defects
Crystals
barrier layers
quantum wells
photoluminescence
defects
crystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Tsuchiya, T., Taniwatari, T., Haga, T., & Kawano, T. (1995). High-quality Zn-diffused InP-related materials fabricated by the open-tube technique. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 664-667). IEEE.

High-quality Zn-diffused InP-related materials fabricated by the open-tube technique. / Tsuchiya, T.; Taniwatari, T.; Haga, T.; Kawano, Toshihiro.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, 1995. p. 664-667.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsuchiya, T, Taniwatari, T, Haga, T & Kawano, T 1995, High-quality Zn-diffused InP-related materials fabricated by the open-tube technique. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, pp. 664-667, Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, Sapporo, Jpn, 95/5/9.
Tsuchiya T, Taniwatari T, Haga T, Kawano T. High-quality Zn-diffused InP-related materials fabricated by the open-tube technique. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE. 1995. p. 664-667
Tsuchiya, T. ; Taniwatari, T. ; Haga, T. ; Kawano, Toshihiro. / High-quality Zn-diffused InP-related materials fabricated by the open-tube technique. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. IEEE, 1995. pp. 664-667
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AB - The crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In0.47Ga0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In0.47Ga0.53As well layers and InP barrier layers occur, even for very thin layers.

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