High-quality Zn-diffused InP-related materials fabricated by the open-tube technique

T. Tsuchiya, T. Taniwatari, T. Haga, T. Kawano

Research output: Contribution to journalConference article

1 Citation (Scopus)


The crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In0.47Ga0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In0.47Ga0.53As well layers and InP barrier layers occur, even for very thin layers.

Original languageEnglish
Pages (from-to)664-667
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1995 Jan 1
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 1995 May 91995 May 13


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this