Abstract
High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.
| Original language | English |
|---|---|
| Pages (from-to) | 1013-1014 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 24 |
| Issue number | 16 |
| Publication status | Published - 1988 Aug 4 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Matsushima, Y., Akiba, S., & Kushiro, Y. (1988). High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes. Electronics Letters, 24(16), 1013-1014.