Abstract
High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.
| Original language | English |
|---|---|
| Pages (from-to) | 1013-1014 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 24 |
| Issue number | 16 |
| Publication status | Published - 1988 Aug 4 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes. / Matsushima, Yuichi; Akiba, S.; Kushiro, Y.
In: Electronics Letters, Vol. 24, No. 16, 04.08.1988, p. 1013-1014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes
AU - Matsushima, Yuichi
AU - Akiba, S.
AU - Kushiro, Y.
PY - 1988/8/4
Y1 - 1988/8/4
N2 - High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.
AB - High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.
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UR - http://www.scopus.com/inward/citedby.url?scp=0024277850&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0024277850
VL - 24
SP - 1013
EP - 1014
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 16
ER -