High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes

Yuichi Matsushima, S. Akiba, Y. Kushiro

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.

Original languageEnglish
Pages (from-to)1013-1014
Number of pages2
JournalElectronics Letters
Volume24
Issue number16
Publication statusPublished - 1988 Aug 4
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Matsushima, Y., Akiba, S., & Kushiro, Y. (1988). High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes. Electronics Letters, 24(16), 1013-1014.