High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes

Yuichi Matsushima, S. Akiba, Y. Kushiro

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.

Original languageEnglish
Pages (from-to)1013-1014
Number of pages2
JournalElectronics Letters
Volume24
Issue number16
Publication statusPublished - 1988 Aug 4
Externally publishedYes

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Submarine cables
Avalanche photodiodes
Optical cables
Photodetectors
Heterojunctions
Activation energy
Wavelength
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Matsushima, Y., Akiba, S., & Kushiro, Y. (1988). High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes. Electronics Letters, 24(16), 1013-1014.

High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes. / Matsushima, Yuichi; Akiba, S.; Kushiro, Y.

In: Electronics Letters, Vol. 24, No. 16, 04.08.1988, p. 1013-1014.

Research output: Contribution to journalArticle

Matsushima, Y, Akiba, S & Kushiro, Y 1988, 'High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes', Electronics Letters, vol. 24, no. 16, pp. 1013-1014.
Matsushima Y, Akiba S, Kushiro Y. High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes. Electronics Letters. 1988 Aug 4;24(16):1013-1014.
Matsushima, Yuichi ; Akiba, S. ; Kushiro, Y. / High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes. In: Electronics Letters. 1988 ; Vol. 24, No. 16. pp. 1013-1014.
@article{f7e5ec644a06400bb5cad6b80d593be3,
title = "High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes",
abstract = "High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.",
author = "Yuichi Matsushima and S. Akiba and Y. Kushiro",
year = "1988",
month = "8",
day = "4",
language = "English",
volume = "24",
pages = "1013--1014",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "16",

}

TY - JOUR

T1 - High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes

AU - Matsushima, Yuichi

AU - Akiba, S.

AU - Kushiro, Y.

PY - 1988/8/4

Y1 - 1988/8/4

N2 - High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.

AB - High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.

UR - http://www.scopus.com/inward/record.url?scp=0024277850&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024277850&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0024277850

VL - 24

SP - 1013

EP - 1014

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 16

ER -