High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si

Takashi Kobayashi, Shinpei Iijima, Atsushi Hiraiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, Ec, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. Ec showed no decrease for Si films that contained as much as 2×1021 cm-3 dopants. Conventional models cannot explain the high Ec. We proposed a new model in which defect reduction in grains lead to the high Ec on the highly-doped Si film.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Editors Anon
Place of PublicationTokyo, Japan
PublisherPubl by Business Cent for Acad Soc Japan
Pages191-194
Number of pages4
Publication statusPublished - 1990
Externally publishedYes
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Kobayashi, T., Iijima, S., & Hiraiwa, A. (1990). High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si. In Anon (Ed.), Conference on Solid State Devices and Materials (pp. 191-194). Publ by Business Cent for Acad Soc Japan.