High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si

Takashi Kobayashi, Shinpei Iijima, Atsushi Hiraiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, Ec, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. Ec showed no decrease for Si films that contained as much as 2×1021 cm-3 dopants. Conventional models cannot explain the high Ec. We proposed a new model in which defect reduction in grains lead to the high Ec on the highly-doped Si film.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Editors Anon
Place of PublicationTokyo, Japan
PublisherPubl by Business Cent for Acad Soc Japan
Pages191-194
Number of pages4
Publication statusPublished - 1990
Externally publishedYes
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

Fingerprint

Phosphorus
Oxides
Doping (additives)
Amorphous silicon
Electric fields
Crystalline materials
Defects

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, T., Iijima, S., & Hiraiwa, A. (1990). High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si. In Anon (Ed.), Conference on Solid State Devices and Materials (pp. 191-194). Tokyo, Japan: Publ by Business Cent for Acad Soc Japan.

High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si. / Kobayashi, Takashi; Iijima, Shinpei; Hiraiwa, Atsushi.

Conference on Solid State Devices and Materials. ed. / Anon. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1990. p. 191-194.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kobayashi, T, Iijima, S & Hiraiwa, A 1990, High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si. in Anon (ed.), Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, Tokyo, Japan, pp. 191-194, 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, 90/8/22.
Kobayashi T, Iijima S, Hiraiwa A. High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si. In Anon, editor, Conference on Solid State Devices and Materials. Tokyo, Japan: Publ by Business Cent for Acad Soc Japan. 1990. p. 191-194
Kobayashi, Takashi ; Iijima, Shinpei ; Hiraiwa, Atsushi. / High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si. Conference on Solid State Devices and Materials. editor / Anon. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1990. pp. 191-194
@inproceedings{bf7b68d9ec254a3ea617930adae62453,
title = "High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si",
abstract = "A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, Ec, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. Ec showed no decrease for Si films that contained as much as 2×1021 cm-3 dopants. Conventional models cannot explain the high Ec. We proposed a new model in which defect reduction in grains lead to the high Ec on the highly-doped Si film.",
author = "Takashi Kobayashi and Shinpei Iijima and Atsushi Hiraiwa",
year = "1990",
language = "English",
pages = "191--194",
editor = "Anon",
booktitle = "Conference on Solid State Devices and Materials",
publisher = "Publ by Business Cent for Acad Soc Japan",

}

TY - GEN

T1 - High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si

AU - Kobayashi, Takashi

AU - Iijima, Shinpei

AU - Hiraiwa, Atsushi

PY - 1990

Y1 - 1990

N2 - A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, Ec, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. Ec showed no decrease for Si films that contained as much as 2×1021 cm-3 dopants. Conventional models cannot explain the high Ec. We proposed a new model in which defect reduction in grains lead to the high Ec on the highly-doped Si film.

AB - A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, Ec, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. Ec showed no decrease for Si films that contained as much as 2×1021 cm-3 dopants. Conventional models cannot explain the high Ec. We proposed a new model in which defect reduction in grains lead to the high Ec on the highly-doped Si film.

UR - http://www.scopus.com/inward/record.url?scp=0025554224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025554224&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025554224

SP - 191

EP - 194

BT - Conference on Solid State Devices and Materials

A2 - Anon, null

PB - Publ by Business Cent for Acad Soc Japan

CY - Tokyo, Japan

ER -