High-resolution CdTe detector and applications to imaging devices

Tadayuki Takahashi, Shin Watanabe, Manabu Kouda, Goro Sato, Yuu Okada, Shin Kubo, Yoshikatsu Kuroda, Mitsunobu Onishi, Ryoichi Ohno

Research output: Contribution to journalArticle

95 Citations (Scopus)


Using a high quality Cadmium Telluride (CdTe) wafer, we formed a Schottky junction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with the previous CdTe detectors. For a relatively thin detector of ∼ 0.5 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2 × 2 mm2 device and 2 keV for a 10 × 10 mm2 device at 5 °C without any charge-loss correction electronics. For astrophysical applications, we have developed an initial prototype CdTe pixel detector based on the CdTe diode. The detector has 400 pixels with a pixel size of 625 × 625 μm2. Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each γ-ray photon.

Original languageEnglish
Pages (from-to)287-291
Number of pages5
JournalIEEE Transactions on Nuclear Science
Issue number3 I
Publication statusPublished - 2001 Jun


  • CdTe
  • CdZnTe
  • Pixel detector

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

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    Takahashi, T., Watanabe, S., Kouda, M., Sato, G., Okada, Y., Kubo, S., Kuroda, Y., Onishi, M., & Ohno, R. (2001). High-resolution CdTe detector and applications to imaging devices. IEEE Transactions on Nuclear Science, 48(3 I), 287-291. https://doi.org/10.1109/23.940067