High resolution CdTe detector and applications to imaging devices

Tadayuki Takahashi; Shin Watanabe; Goro Sato; Yuu Okada; Shin Kubo; Yoshikatsu Kuroda; Mitsunobu Onishi; Ryoichi Ohno

High resolution CdTe detector and applications to imaging devices

Tadayuki Takahashi^*, Shin Watanabe, Goro Sato, Yuu Okada, Shin Kubo, Yoshikatsu Kuroda, Mitsunobu Onishi, Ryoichi Ohno

^*Corresponding author for this work

Waseda Research Institute for Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Using a high quality Cadmium Telluride (CdTe) wafer, we formed a Schottky junction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with the previous CdTe detectors. For a relatively thin detector of ≈ 0.5 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2×2 mm² device and 2 keV for a 10×10 mm² device at 5°C without any charge-loss correction electronics. For astrophysical applications, we have developed a an initial prototype CdTe pixel detector based on the CdTe diode. The detector has 400 pixels with a pixel size of 625 × 625 μ². Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each γ-ray photon.

Original language	English
Title of host publication	IEEE Nuclear Science Symposium and Medical Imaging Conference
Editors	D. Merelli, J. Surget, M. Ulma
Volume	1
Publication status	Published - 2000
Event	2000 IEEE Nuclear Science Symposium Conference Record - Lyon Duration: 2000 Oct 15 → 2000 Oct 20

Other

Other	2000 IEEE Nuclear Science Symposium Conference Record
City	Lyon
Period	00/10/15 → 00/10/20

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Industrial and Manufacturing Engineering

Cite this

@inproceedings{5afdeaca143d4441a1d50d1636236fd5,

title = "High resolution CdTe detector and applications to imaging devices",

abstract = "Using a high quality Cadmium Telluride (CdTe) wafer, we formed a Schottky junction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with the previous CdTe detectors. For a relatively thin detector of ≈ 0.5 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2×2 mm2 device and 2 keV for a 10×10 mm2 device at 5°C without any charge-loss correction electronics. For astrophysical applications, we have developed a an initial prototype CdTe pixel detector based on the CdTe diode. The detector has 400 pixels with a pixel size of 625 × 625 μ2. Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each γ-ray photon.",

author = "Tadayuki Takahashi and Shin Watanabe and Goro Sato and Yuu Okada and Shin Kubo and Yoshikatsu Kuroda and Mitsunobu Onishi and Ryoichi Ohno",

year = "2000",

language = "English",

volume = "1",

editor = "D. Merelli and J. Surget and M. Ulma",

booktitle = "IEEE Nuclear Science Symposium and Medical Imaging Conference",

note = "2000 IEEE Nuclear Science Symposium Conference Record ; Conference date: 15-10-2000 Through 20-10-2000",

}

TY - GEN

T1 - High resolution CdTe detector and applications to imaging devices

AU - Takahashi, Tadayuki

AU - Watanabe, Shin

AU - Sato, Goro

AU - Okada, Yuu

AU - Kubo, Shin

AU - Kuroda, Yoshikatsu

AU - Onishi, Mitsunobu

AU - Ohno, Ryoichi

PY - 2000

Y1 - 2000

N2 - Using a high quality Cadmium Telluride (CdTe) wafer, we formed a Schottky junction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with the previous CdTe detectors. For a relatively thin detector of ≈ 0.5 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2×2 mm2 device and 2 keV for a 10×10 mm2 device at 5°C without any charge-loss correction electronics. For astrophysical applications, we have developed a an initial prototype CdTe pixel detector based on the CdTe diode. The detector has 400 pixels with a pixel size of 625 × 625 μ2. Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each γ-ray photon.

AB - Using a high quality Cadmium Telluride (CdTe) wafer, we formed a Schottky junction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with the previous CdTe detectors. For a relatively thin detector of ≈ 0.5 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2×2 mm2 device and 2 keV for a 10×10 mm2 device at 5°C without any charge-loss correction electronics. For astrophysical applications, we have developed a an initial prototype CdTe pixel detector based on the CdTe diode. The detector has 400 pixels with a pixel size of 625 × 625 μ2. Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each γ-ray photon.

UR - http://www.scopus.com/inward/record.url?scp=0034593501&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034593501&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034593501

VL - 1

BT - IEEE Nuclear Science Symposium and Medical Imaging Conference

A2 - Merelli, D.

A2 - Surget, J.

A2 - Ulma, M.

T2 - 2000 IEEE Nuclear Science Symposium Conference Record

Y2 - 15 October 2000 through 20 October 2000

ER -

High resolution CdTe detector and applications to imaging devices

Abstract

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ASJC Scopus subject areas

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