High resolution CdTe detector and applications to imaging devices

Tadayuki Takahashi, Shin Watanabe, Goro Sato, Yuu Okada, Shin Kubo, Yoshikatsu Kuroda, Mitsunobu Onishi, Ryoichi Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using a high quality Cadmium Telluride (CdTe) wafer, we formed a Schottky junction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with the previous CdTe detectors. For a relatively thin detector of ≈ 0.5 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2×2 mm2 device and 2 keV for a 10×10 mm2 device at 5°C without any charge-loss correction electronics. For astrophysical applications, we have developed a an initial prototype CdTe pixel detector based on the CdTe diode. The detector has 400 pixels with a pixel size of 625 × 625 μ2. Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each γ-ray photon.

Original languageEnglish
Title of host publicationIEEE Nuclear Science Symposium and Medical Imaging Conference
EditorsD. Merelli, J. Surget, M. Ulma
Volume1
Publication statusPublished - 2000
Event2000 IEEE Nuclear Science Symposium Conference Record - Lyon
Duration: 2000 Oct 152000 Oct 20

Other

Other2000 IEEE Nuclear Science Symposium Conference Record
CityLyon
Period00/10/1500/10/20

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ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering

Cite this

Takahashi, T., Watanabe, S., Sato, G., Okada, Y., Kubo, S., Kuroda, Y., Onishi, M., & Ohno, R. (2000). High resolution CdTe detector and applications to imaging devices. In D. Merelli, J. Surget, & M. Ulma (Eds.), IEEE Nuclear Science Symposium and Medical Imaging Conference (Vol. 1)