High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

Hirokazu Odaka, Yuto Ichinohe, Shinichiro Takeda, Taro Fukuyama, Koichi Hagino, Shinya Saito, Tamotsu Sato, Goro Sato, Shin Watanabe, Motohide Kokubun, Tadayuki Takahashi, Mitsutaka Yamaguchi, Takaaki Tanaka, Hiroyasu Tajima, Kazuhiro Nakazawa, Yasushi Fukazawa

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

Original languageEnglish
Pages (from-to)179-183
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume695
DOIs
Publication statusPublished - 2012 Dec 11

Fingerprint

Cadmium telluride
cadmium tellurides
strip
Cameras
cameras
Detectors
Silicon
high resolution
detectors
silicon
angular resolution
Compton scattering
Imaging techniques
energy methods
data reduction
Semiconductor devices
semiconductor devices
Data reduction
Calibration
Semiconductor materials

Keywords

  • CdTe double-sided strip detector
  • Compton camera
  • Gamma-ray imaging

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

High-resolution Compton cameras based on Si/CdTe double-sided strip detectors. / Odaka, Hirokazu; Ichinohe, Yuto; Takeda, Shinichiro; Fukuyama, Taro; Hagino, Koichi; Saito, Shinya; Sato, Tamotsu; Sato, Goro; Watanabe, Shin; Kokubun, Motohide; Takahashi, Tadayuki; Yamaguchi, Mitsutaka; Tanaka, Takaaki; Tajima, Hiroyasu; Nakazawa, Kazuhiro; Fukazawa, Yasushi.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 695, 11.12.2012, p. 179-183.

Research output: Contribution to journalArticle

Odaka, H, Ichinohe, Y, Takeda, S, Fukuyama, T, Hagino, K, Saito, S, Sato, T, Sato, G, Watanabe, S, Kokubun, M, Takahashi, T, Yamaguchi, M, Tanaka, T, Tajima, H, Nakazawa, K & Fukazawa, Y 2012, 'High-resolution Compton cameras based on Si/CdTe double-sided strip detectors', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 695, pp. 179-183. https://doi.org/10.1016/j.nima.2011.12.061
Odaka, Hirokazu ; Ichinohe, Yuto ; Takeda, Shinichiro ; Fukuyama, Taro ; Hagino, Koichi ; Saito, Shinya ; Sato, Tamotsu ; Sato, Goro ; Watanabe, Shin ; Kokubun, Motohide ; Takahashi, Tadayuki ; Yamaguchi, Mitsutaka ; Tanaka, Takaaki ; Tajima, Hiroyasu ; Nakazawa, Kazuhiro ; Fukazawa, Yasushi. / High-resolution Compton cameras based on Si/CdTe double-sided strip detectors. In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2012 ; Vol. 695. pp. 179-183.
@article{e0e9d18280d54c19ab25ad814e00de0c,
title = "High-resolution Compton cameras based on Si/CdTe double-sided strip detectors",
abstract = "We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.",
keywords = "CdTe double-sided strip detector, Compton camera, Gamma-ray imaging",
author = "Hirokazu Odaka and Yuto Ichinohe and Shinichiro Takeda and Taro Fukuyama and Koichi Hagino and Shinya Saito and Tamotsu Sato and Goro Sato and Shin Watanabe and Motohide Kokubun and Tadayuki Takahashi and Mitsutaka Yamaguchi and Takaaki Tanaka and Hiroyasu Tajima and Kazuhiro Nakazawa and Yasushi Fukazawa",
year = "2012",
month = "12",
day = "11",
doi = "10.1016/j.nima.2011.12.061",
language = "English",
volume = "695",
pages = "179--183",
journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier",

}

TY - JOUR

T1 - High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

AU - Odaka, Hirokazu

AU - Ichinohe, Yuto

AU - Takeda, Shinichiro

AU - Fukuyama, Taro

AU - Hagino, Koichi

AU - Saito, Shinya

AU - Sato, Tamotsu

AU - Sato, Goro

AU - Watanabe, Shin

AU - Kokubun, Motohide

AU - Takahashi, Tadayuki

AU - Yamaguchi, Mitsutaka

AU - Tanaka, Takaaki

AU - Tajima, Hiroyasu

AU - Nakazawa, Kazuhiro

AU - Fukazawa, Yasushi

PY - 2012/12/11

Y1 - 2012/12/11

N2 - We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

AB - We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

KW - CdTe double-sided strip detector

KW - Compton camera

KW - Gamma-ray imaging

UR - http://www.scopus.com/inward/record.url?scp=84867875002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867875002&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2011.12.061

DO - 10.1016/j.nima.2011.12.061

M3 - Article

AN - SCOPUS:84867875002

VL - 695

SP - 179

EP - 183

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

ER -