TY - JOUR
T1 - High-resolution Compton cameras based on Si/CdTe double-sided strip detectors
AU - Odaka, Hirokazu
AU - Ichinohe, Yuto
AU - Takeda, Shinichiro
AU - Fukuyama, Taro
AU - Hagino, Koichi
AU - Saito, Shinya
AU - Sato, Tamotsu
AU - Sato, Goro
AU - Watanabe, Shin
AU - Kokubun, Motohide
AU - Takahashi, Tadayuki
AU - Yamaguchi, Mitsutaka
AU - Tanaka, Takaaki
AU - Tajima, Hiroyasu
AU - Nakazawa, Kazuhiro
AU - Fukazawa, Yasushi
PY - 2012/12/11
Y1 - 2012/12/11
N2 - We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.
AB - We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.
KW - CdTe double-sided strip detector
KW - Compton camera
KW - Gamma-ray imaging
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U2 - 10.1016/j.nima.2011.12.061
DO - 10.1016/j.nima.2011.12.061
M3 - Article
AN - SCOPUS:84867875002
SN - 0168-9002
VL - 695
SP - 179
EP - 183
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
ER -