High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

Hirokazu Odaka, Yuto Ichinohe, Shinichiro Takeda, Taro Fukuyama, Koichi Hagino, Shinya Saito, Tamotsu Sato, Goro Sato, Shin Watanabe, Motohide Kokubun, Tadayuki Takahashi, Mitsutaka Yamaguchi, Takaaki Tanaka, Hiroyasu Tajima, Kazuhiro Nakazawa, Yasushi Fukazawa

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

Original languageEnglish
Pages (from-to)179-183
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume695
DOIs
Publication statusPublished - 2012 Dec 11

Keywords

  • CdTe double-sided strip detector
  • Compton camera
  • Gamma-ray imaging

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

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