High-resolution electron microscope study of silicon on insulator structure grown by lateral solid phase epitaxy

Hiroshi Kawarada, Tomo Ueno, Iwao Ohdomari, Yasuo Kunii, Shigeo Horiuchi

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Structural study of L-SPE grown (100)Si/SiO2 interface after high temperature annealing in Ar has been carried out using HRTEM. On an atomic scale the roughness at the (100)Si/SiO2 interface is less than a few lattice planes (0.5 nm). When micro-twins are present in the L-SPE layer, almost all of them nucleate at the Si/Si02 interface. This is evidence for the formation of (111) growth planes near the interface during the L-SPE growth. The twin/Si02 interface is not parallel to the substrate and forms atomically sharp (111) facets. This fact indicates that the interfacial energy of the (11 l)Si/Si02 interface is lower than that of the (100)Si/SiO2 in solid phase.

Original languageEnglish
Pages (from-to)L814-L817
JournalJapanese journal of applied physics
Issue number10 A
Publication statusPublished - 1986 Oct


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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