HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF SILICON ON INSULATOR STRUCTURE GROWN BY LATERAL SOLID PHASE EPITAXY.

Hiroshi Kawarada, Tomo Ueno, Yasuo Kunii, Shigeo Horiuchi, Iwao Ohdomari

    Research output: Chapter in Book/Report/Conference proceedingChapter

    5 Citations (Scopus)

    Abstract

    Structural study of L-SPE grown (100)Si/SiO//2 interface after high temperature annealing in Ar has been carried out using HRTEM. On an atomic scale the roughness at the (100)Si/SiO//2 interface is less than a few lattice planes (0. 5 nm). When micro-twins are present in the L-SPE layer, almost all of them nucleate at the Si/SiO//2 interface. This is evidence for the formation of left brace 111 right brace growth planes near the interface during the L-SPE growth. The twin/ SiO//2 interface is not parallel to the substrate and forms atomically sharp left brace 111 right brace facets. This fact indicates that the interfacial energy for the (111)Si/SiO//2 interface is lower than that of the (100)Si/SiO//2 in solid phase.

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
    Pages814-817
    Number of pages4
    Volume25
    Edition10
    Publication statusPublished - 1986 Oct

    Fingerprint

    Epitaxial growth
    Electron microscopes
    Silicon
    Interfacial energy
    Surface roughness
    Annealing
    Substrates
    Temperature

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Kawarada, H., Ueno, T., Kunii, Y., Horiuchi, S., & Ohdomari, I. (1986). HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF SILICON ON INSULATOR STRUCTURE GROWN BY LATERAL SOLID PHASE EPITAXY. In Japanese Journal of Applied Physics, Part 2: Letters (10 ed., Vol. 25, pp. 814-817)

    HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF SILICON ON INSULATOR STRUCTURE GROWN BY LATERAL SOLID PHASE EPITAXY. / Kawarada, Hiroshi; Ueno, Tomo; Kunii, Yasuo; Horiuchi, Shigeo; Ohdomari, Iwao.

    Japanese Journal of Applied Physics, Part 2: Letters. Vol. 25 10. ed. 1986. p. 814-817.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Kawarada, H, Ueno, T, Kunii, Y, Horiuchi, S & Ohdomari, I 1986, HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF SILICON ON INSULATOR STRUCTURE GROWN BY LATERAL SOLID PHASE EPITAXY. in Japanese Journal of Applied Physics, Part 2: Letters. 10 edn, vol. 25, pp. 814-817.
    Kawarada H, Ueno T, Kunii Y, Horiuchi S, Ohdomari I. HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF SILICON ON INSULATOR STRUCTURE GROWN BY LATERAL SOLID PHASE EPITAXY. In Japanese Journal of Applied Physics, Part 2: Letters. 10 ed. Vol. 25. 1986. p. 814-817
    Kawarada, Hiroshi ; Ueno, Tomo ; Kunii, Yasuo ; Horiuchi, Shigeo ; Ohdomari, Iwao. / HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF SILICON ON INSULATOR STRUCTURE GROWN BY LATERAL SOLID PHASE EPITAXY. Japanese Journal of Applied Physics, Part 2: Letters. Vol. 25 10. ed. 1986. pp. 814-817
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    abstract = "Structural study of L-SPE grown (100)Si/SiO//2 interface after high temperature annealing in Ar has been carried out using HRTEM. On an atomic scale the roughness at the (100)Si/SiO//2 interface is less than a few lattice planes (0. 5 nm). When micro-twins are present in the L-SPE layer, almost all of them nucleate at the Si/SiO//2 interface. This is evidence for the formation of left brace 111 right brace growth planes near the interface during the L-SPE growth. The twin/ SiO//2 interface is not parallel to the substrate and forms atomically sharp left brace 111 right brace facets. This fact indicates that the interfacial energy for the (111)Si/SiO//2 interface is lower than that of the (100)Si/SiO//2 in solid phase.",
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