HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF THE PtSi-Si(111) INTERFACE.

Hiroshi Kawarada, M. Ishida, J. Nakanishi, I. Ohdomari, S. Horiuchi

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    The atomic arrangement of the PtSi-Si(111) interface and epitaxial growth of PtSi on Si(111) have been investigated using lattice imaging. Small PtSi domains (20-40 nm) which have three equivalent positions on Si(111) grow epitaxially all over the substrate with an atomically uneven interface. However, the transition from a PtSi lattice to a Si lattice is abrupt. The interface has atomic steps, which have been verified by image simulations at the interface. Atomic-scale models of the interface consistent with the observed lattice images have been derived. In the proposed models, inclined interfaces increase the local coherency between PtSi and Si. The validity of the models has been examined by classical ideas of interphase boundaries.

    Original languageEnglish
    Pages (from-to)729-741
    Number of pages13
    JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
    Volume54
    Issue number5
    Publication statusPublished - 1986 Nov

    Fingerprint

    Electron microscopes
    electron microscopes
    high resolution
    Epitaxial growth
    Imaging techniques
    scale models
    Substrates
    simulation

    ASJC Scopus subject areas

    • Materials Science(all)
    • Electronic, Optical and Magnetic Materials
    • Metals and Alloys
    • Physics and Astronomy (miscellaneous)
    • Condensed Matter Physics

    Cite this

    HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF THE PtSi-Si(111) INTERFACE. / Kawarada, Hiroshi; Ishida, M.; Nakanishi, J.; Ohdomari, I.; Horiuchi, S.

    In: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, Vol. 54, No. 5, 11.1986, p. 729-741.

    Research output: Contribution to journalArticle

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