High-resolution Schottky CdTe diode detector

Tadayuki Takahashi, Takefumi Mitani, Yoshihito Kobayashi, Manabu Kouda, Goro Sato, Shin Watanabe, Kazuhiro Nakazawa, Yuu Okada, Minoru Funaki, Ryoichi Ohno, Kunishiro Mori

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thickness, the high bias voltage results in a high electric field in the device. Both the improved charge-collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV full-width at half-maximum at 60 keV for a 2 × 2 mm2 device without any charge-loss correction electronics. Large-area detectors with dimensions of 21 × 21 mm2 are now available with an energy resolution of ∼ 2.8 keV. Long-term stability can be easily attained for relatively thin (< 1 mm) detectors if they are cooled or operated under a high bias voltage.

Original languageEnglish
Pages (from-to)1297-1303
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume49 II
Issue number3
DOIs
Publication statusPublished - 2002 Jun

Keywords

  • CdTe
  • CdZnTe
  • Gamma-ray
  • Pixel detector
  • X-ray

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

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  • Cite this

    Takahashi, T., Mitani, T., Kobayashi, Y., Kouda, M., Sato, G., Watanabe, S., Nakazawa, K., Okada, Y., Funaki, M., Ohno, R., & Mori, K. (2002). High-resolution Schottky CdTe diode detector. IEEE Transactions on Nuclear Science, 49 II(3), 1297-1303. https://doi.org/10.1109/TNS.2002.1039655