High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy

Z. X. Qin, H. Nagano, Y. Sugure, A. W. Jia, Masakazu Kobayashi, Y. Kato, A. Yoshikawa, K. Takahashi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Cubic GaN epilayers were grown on atomic hydrogen treated (0 0 1)GaAs substrates by RF-radical source molecular beam epitaxy. The crystalline quality was characterized by a high-resolution X-ray diffractometer. It was found that high-quality c-GaN can be grown at temperatures above 680°C; the FWHM of (0 0 2)GaN rocking curve was as small as 80-90 arcsec. In order to further precisely investigate how and to what extent the h-GaN phase is included in the c-GaN layer, the X-ray reciprocal space maps were measured for the X-ray beams incident along both 〈1 1 0〉 and 〈1 1 0〉 azimuths. It was found that the stacking faults exist predominantly on {1 1 1} A planes. The inclusion of h-GaN was estimated by comparing the integrated XRD intensities for h-GaN {1 0 1 1} and c-GaN(0 0 2) planes. It was found that the inclusion of h-GaN phase drastically decreased with increasing growth temperature above 680°C to reach about 4 × 10-3 (or below) at temperatures of 710-740°C.

Original languageEnglish
Pages (from-to)425-429
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Fingerprint

Molecular beam epitaxy
X ray diffraction analysis
molecular beam epitaxy
X rays
high resolution
diffraction
inclusions
x rays
Epilayers
Stacking faults
Diffractometers
Growth temperature
Full width at half maximum
diffractometers
azimuth
crystal defects
temperature
Hydrogen
Crystalline materials
Temperature

Keywords

  • (0 0 1)GaAs substrate
  • Cubic GaN
  • Hexagonal GaN
  • High-resolution XRD
  • MBE
  • Reciprocal space mapping

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy. / Qin, Z. X.; Nagano, H.; Sugure, Y.; Jia, A. W.; Kobayashi, Masakazu; Kato, Y.; Yoshikawa, A.; Takahashi, K.

In: Journal of Crystal Growth, Vol. 189-190, 15.06.1998, p. 425-429.

Research output: Contribution to journalArticle

Qin, ZX, Nagano, H, Sugure, Y, Jia, AW, Kobayashi, M, Kato, Y, Yoshikawa, A & Takahashi, K 1998, 'High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy', Journal of Crystal Growth, vol. 189-190, pp. 425-429.
Qin, Z. X. ; Nagano, H. ; Sugure, Y. ; Jia, A. W. ; Kobayashi, Masakazu ; Kato, Y. ; Yoshikawa, A. ; Takahashi, K. / High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy. In: Journal of Crystal Growth. 1998 ; Vol. 189-190. pp. 425-429.
@article{8eaaef6c23f848cea4f9db76b3235edb,
title = "High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy",
abstract = "Cubic GaN epilayers were grown on atomic hydrogen treated (0 0 1)GaAs substrates by RF-radical source molecular beam epitaxy. The crystalline quality was characterized by a high-resolution X-ray diffractometer. It was found that high-quality c-GaN can be grown at temperatures above 680°C; the FWHM of (0 0 2)GaN rocking curve was as small as 80-90 arcsec. In order to further precisely investigate how and to what extent the h-GaN phase is included in the c-GaN layer, the X-ray reciprocal space maps were measured for the X-ray beams incident along both 〈1 1 0〉 and 〈1 1 0〉 azimuths. It was found that the stacking faults exist predominantly on {1 1 1} A planes. The inclusion of h-GaN was estimated by comparing the integrated XRD intensities for h-GaN {1 0 1 1} and c-GaN(0 0 2) planes. It was found that the inclusion of h-GaN phase drastically decreased with increasing growth temperature above 680°C to reach about 4 × 10-3 (or below) at temperatures of 710-740°C.",
keywords = "(0 0 1)GaAs substrate, Cubic GaN, Hexagonal GaN, High-resolution XRD, MBE, Reciprocal space mapping",
author = "Qin, {Z. X.} and H. Nagano and Y. Sugure and Jia, {A. W.} and Masakazu Kobayashi and Y. Kato and A. Yoshikawa and K. Takahashi",
year = "1998",
month = "6",
day = "15",
language = "English",
volume = "189-190",
pages = "425--429",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy

AU - Qin, Z. X.

AU - Nagano, H.

AU - Sugure, Y.

AU - Jia, A. W.

AU - Kobayashi, Masakazu

AU - Kato, Y.

AU - Yoshikawa, A.

AU - Takahashi, K.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - Cubic GaN epilayers were grown on atomic hydrogen treated (0 0 1)GaAs substrates by RF-radical source molecular beam epitaxy. The crystalline quality was characterized by a high-resolution X-ray diffractometer. It was found that high-quality c-GaN can be grown at temperatures above 680°C; the FWHM of (0 0 2)GaN rocking curve was as small as 80-90 arcsec. In order to further precisely investigate how and to what extent the h-GaN phase is included in the c-GaN layer, the X-ray reciprocal space maps were measured for the X-ray beams incident along both 〈1 1 0〉 and 〈1 1 0〉 azimuths. It was found that the stacking faults exist predominantly on {1 1 1} A planes. The inclusion of h-GaN was estimated by comparing the integrated XRD intensities for h-GaN {1 0 1 1} and c-GaN(0 0 2) planes. It was found that the inclusion of h-GaN phase drastically decreased with increasing growth temperature above 680°C to reach about 4 × 10-3 (or below) at temperatures of 710-740°C.

AB - Cubic GaN epilayers were grown on atomic hydrogen treated (0 0 1)GaAs substrates by RF-radical source molecular beam epitaxy. The crystalline quality was characterized by a high-resolution X-ray diffractometer. It was found that high-quality c-GaN can be grown at temperatures above 680°C; the FWHM of (0 0 2)GaN rocking curve was as small as 80-90 arcsec. In order to further precisely investigate how and to what extent the h-GaN phase is included in the c-GaN layer, the X-ray reciprocal space maps were measured for the X-ray beams incident along both 〈1 1 0〉 and 〈1 1 0〉 azimuths. It was found that the stacking faults exist predominantly on {1 1 1} A planes. The inclusion of h-GaN was estimated by comparing the integrated XRD intensities for h-GaN {1 0 1 1} and c-GaN(0 0 2) planes. It was found that the inclusion of h-GaN phase drastically decreased with increasing growth temperature above 680°C to reach about 4 × 10-3 (or below) at temperatures of 710-740°C.

KW - (0 0 1)GaAs substrate

KW - Cubic GaN

KW - Hexagonal GaN

KW - High-resolution XRD

KW - MBE

KW - Reciprocal space mapping

UR - http://www.scopus.com/inward/record.url?scp=0032094522&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032094522&partnerID=8YFLogxK

M3 - Article

VL - 189-190

SP - 425

EP - 429

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -