High RF output power for H-terminated diamond FETs

M. Kasu; K. Ueda; H. Ye; Y. Yamauchi; S. Sasaki; T. Makimoto

doi:10.1016/j.diamond.2005.12.025

High RF output power for H-terminated diamond FETs

M. Kasu^*, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (P_out) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

Original language	English
Pages (from-to)	783-786
Number of pages	4
Journal	Diamond and Related Materials
Volume	15
Issue number	4-8
DOIs	https://doi.org/10.1016/j.diamond.2005.12.025
Publication status	Published - 2006 Apr 1
Externally published	Yes

Keywords

Diamond
FET
H-termination
MESFET
Power
RF

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Physics and Astronomy(all)
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2005.12.025

Cite this

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title = "High RF output power for H-terminated diamond FETs",

abstract = "We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.",

keywords = "Diamond, FET, H-termination, MESFET, Power, RF",

author = "M. Kasu and K. Ueda and H. Ye and Y. Yamauchi and S. Sasaki and T. Makimoto",

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doi = "10.1016/j.diamond.2005.12.025",

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TY - JOUR

T1 - High RF output power for H-terminated diamond FETs

AU - Kasu, M.

AU - Ueda, K.

AU - Ye, H.

AU - Yamauchi, Y.

AU - Sasaki, S.

AU - Makimoto, T.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

AB - We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

KW - Diamond

KW - FET

KW - H-termination

KW - MESFET

KW - Power

KW - RF

UR - http://www.scopus.com/inward/record.url?scp=33745281188&partnerID=8YFLogxK

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U2 - 10.1016/j.diamond.2005.12.025

DO - 10.1016/j.diamond.2005.12.025

M3 - Article

AN - SCOPUS:33745281188

SN - 0925-9635

VL - 15

SP - 783

EP - 786

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 4-8

ER -

High RF output power for H-terminated diamond FETs

Abstract

Keywords

ASJC Scopus subject areas

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