High RF output power for H-terminated diamond FETs

M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, Toshiki Makimoto

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

Original languageEnglish
Pages (from-to)783-786
Number of pages4
JournalDiamond and Related Materials
Volume15
Issue number4-8
DOIs
Publication statusPublished - 2006 Apr
Externally publishedYes

Fingerprint

Diamond
Field effect transistors
Diamonds
field effect transistors
diamonds
output
Thermal conductivity
power gain
power efficiency
thermal conductivity
Temperature
temperature

Keywords

  • Diamond
  • FET
  • H-termination
  • MESFET
  • Power
  • RF

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

High RF output power for H-terminated diamond FETs. / Kasu, M.; Ueda, K.; Ye, H.; Yamauchi, Y.; Sasaki, S.; Makimoto, Toshiki.

In: Diamond and Related Materials, Vol. 15, No. 4-8, 04.2006, p. 783-786.

Research output: Contribution to journalArticle

Kasu, M. ; Ueda, K. ; Ye, H. ; Yamauchi, Y. ; Sasaki, S. ; Makimoto, Toshiki. / High RF output power for H-terminated diamond FETs. In: Diamond and Related Materials. 2006 ; Vol. 15, No. 4-8. pp. 783-786.
@article{8cdbc21a3f1c41139318c4bf3c39208c,
title = "High RF output power for H-terminated diamond FETs",
abstract = "We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3{\%}. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.",
keywords = "Diamond, FET, H-termination, MESFET, Power, RF",
author = "M. Kasu and K. Ueda and H. Ye and Y. Yamauchi and S. Sasaki and Toshiki Makimoto",
year = "2006",
month = "4",
doi = "10.1016/j.diamond.2005.12.025",
language = "English",
volume = "15",
pages = "783--786",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "4-8",

}

TY - JOUR

T1 - High RF output power for H-terminated diamond FETs

AU - Kasu, M.

AU - Ueda, K.

AU - Ye, H.

AU - Yamauchi, Y.

AU - Sasaki, S.

AU - Makimoto, Toshiki

PY - 2006/4

Y1 - 2006/4

N2 - We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

AB - We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

KW - Diamond

KW - FET

KW - H-termination

KW - MESFET

KW - Power

KW - RF

UR - http://www.scopus.com/inward/record.url?scp=33745281188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745281188&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2005.12.025

DO - 10.1016/j.diamond.2005.12.025

M3 - Article

VL - 15

SP - 783

EP - 786

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 4-8

ER -