High room-temperature hole concentrations above 10 19 cm -3 in Mg-doped InGaN/GaN superlattices

K. Kumakura, Toshiki Makimoto, N. Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We achieved high hole concentrations above 10 19 cm 3 at room temperature in Mg-doped In xGa 1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the In xGa 1-xN/GaN superlattices increased With the In mole fraction, and the maximum hole concentration reached 2.8 × 10 19 cm -3 for the In 0.22Ga 0.78N/GaN superlattice. The hole concentrations for the superlattices strongly depend on the structural parameters of the superlattices. The band bending due to the strain-induced piezoelectric field and the valence band structures of the InGaN/GaN heterostructures affect the hole generation in the superlattices. The weak temperature dependence of the resistivities for the InGaN/GaN superlattices With higher In mole fractions indicates highly efficient hole generation in the superlattice.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.J. Shul, F. Ren, W. Pletschen, M. Murakami
Volume622
Publication statusPublished - 2000
Externally publishedYes
EventWide-Bandgap Electronic Devices - San Francisco, CA, United States
Duration: 2000 Apr 242000 Apr 27

Other

OtherWide-Bandgap Electronic Devices
CountryUnited States
CitySan Francisco, CA
Period00/4/2400/4/27

Fingerprint

Hole concentration
Superlattices
Temperature
Metallorganic vapor phase epitaxy
Valence bands
Band structure
Heterojunctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kumakura, K., Makimoto, T., & Kobayashi, N. (2000). High room-temperature hole concentrations above 10 19 cm -3 in Mg-doped InGaN/GaN superlattices In R. J. Shul, F. Ren, W. Pletschen, & M. Murakami (Eds.), Materials Research Society Symposium - Proceedings (Vol. 622)

High room-temperature hole concentrations above 10 19 cm -3 in Mg-doped InGaN/GaN superlattices . / Kumakura, K.; Makimoto, Toshiki; Kobayashi, N.

Materials Research Society Symposium - Proceedings. ed. / R.J. Shul; F. Ren; W. Pletschen; M. Murakami. Vol. 622 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kumakura, K, Makimoto, T & Kobayashi, N 2000, High room-temperature hole concentrations above 10 19 cm -3 in Mg-doped InGaN/GaN superlattices in RJ Shul, F Ren, W Pletschen & M Murakami (eds), Materials Research Society Symposium - Proceedings. vol. 622, Wide-Bandgap Electronic Devices, San Francisco, CA, United States, 00/4/24.
Kumakura K, Makimoto T, Kobayashi N. High room-temperature hole concentrations above 10 19 cm -3 in Mg-doped InGaN/GaN superlattices In Shul RJ, Ren F, Pletschen W, Murakami M, editors, Materials Research Society Symposium - Proceedings. Vol. 622. 2000
Kumakura, K. ; Makimoto, Toshiki ; Kobayashi, N. / High room-temperature hole concentrations above 10 19 cm -3 in Mg-doped InGaN/GaN superlattices Materials Research Society Symposium - Proceedings. editor / R.J. Shul ; F. Ren ; W. Pletschen ; M. Murakami. Vol. 622 2000.
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N2 - We achieved high hole concentrations above 10 19 cm 3 at room temperature in Mg-doped In xGa 1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the In xGa 1-xN/GaN superlattices increased With the In mole fraction, and the maximum hole concentration reached 2.8 × 10 19 cm -3 for the In 0.22Ga 0.78N/GaN superlattice. The hole concentrations for the superlattices strongly depend on the structural parameters of the superlattices. The band bending due to the strain-induced piezoelectric field and the valence band structures of the InGaN/GaN heterostructures affect the hole generation in the superlattices. The weak temperature dependence of the resistivities for the InGaN/GaN superlattices With higher In mole fractions indicates highly efficient hole generation in the superlattice.

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