HIGH SENSITIVITY OF VPE-GROWN InGaAs/InP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE.

Yuichi Matsushima; Y. Noda; Y. Kushiro; N. Seki; S. Akiba

HIGH SENSITIVITY OF VPE-GROWN InGaAs/InP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE.

Yuichi Matsushima^*, Y. Noda, Y. Kushiro, N. Seki, S. Akiba

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10** minus **9 error rate at 280 Mbit/s was as low as minus 43 dbm, which corresponded to 2 and 7 db improvements over a Ge-APD at 1. 52 and 1. 59 mu m, respectively.

Original language	English
Pages (from-to)	235-236
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	6
Publication status	Published - 1984 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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abstract = "A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10** minus **9 error rate at 280 Mbit/s was as low as minus 43 dbm, which corresponded to 2 and 7 db improvements over a Ge-APD at 1. 52 and 1. 59 mu m, respectively.",

author = "Yuichi Matsushima and Y. Noda and Y. Kushiro and N. Seki and S. Akiba",

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AU - Matsushima, Yuichi

AU - Noda, Y.

AU - Kushiro, Y.

AU - Seki, N.

AU - Akiba, S.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10** minus **9 error rate at 280 Mbit/s was as low as minus 43 dbm, which corresponded to 2 and 7 db improvements over a Ge-APD at 1. 52 and 1. 59 mu m, respectively.

AB - A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10** minus **9 error rate at 280 Mbit/s was as low as minus 43 dbm, which corresponded to 2 and 7 db improvements over a Ge-APD at 1. 52 and 1. 59 mu m, respectively.

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JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

HIGH SENSITIVITY OF VPE-GROWN InGaAs/InP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE.

Abstract

ASJC Scopus subject areas

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