HIGH SENSITIVITY OF VPE-GROWN InGaAs/InP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE.

Yuichi Matsushima, Y. Noda, Y. Kushiro, N. Seki, S. Akiba

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10** minus **9 error rate at 280 Mbit/s was as low as minus 43 dbm, which corresponded to 2 and 7 db improvements over a Ge-APD at 1. 52 and 1. 59 mu m, respectively.

Original languageEnglish
Pages (from-to)235-236
Number of pages2
JournalElectronics Letters
Volume20
Issue number6
Publication statusPublished - 1984 Jan 1
Externally publishedYes

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Vapor phase epitaxy
Buffer layers
Heterojunctions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Matsushima, Y., Noda, Y., Kushiro, Y., Seki, N., & Akiba, S. (1984). HIGH SENSITIVITY OF VPE-GROWN InGaAs/InP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE. Electronics Letters, 20(6), 235-236.

HIGH SENSITIVITY OF VPE-GROWN InGaAs/InP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE. / Matsushima, Yuichi; Noda, Y.; Kushiro, Y.; Seki, N.; Akiba, S.

In: Electronics Letters, Vol. 20, No. 6, 01.01.1984, p. 235-236.

Research output: Contribution to journalArticle

Matsushima, Y, Noda, Y, Kushiro, Y, Seki, N & Akiba, S 1984, 'HIGH SENSITIVITY OF VPE-GROWN InGaAs/InP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE.', Electronics Letters, vol. 20, no. 6, pp. 235-236.
Matsushima, Yuichi ; Noda, Y. ; Kushiro, Y. ; Seki, N. ; Akiba, S. / HIGH SENSITIVITY OF VPE-GROWN InGaAs/InP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE. In: Electronics Letters. 1984 ; Vol. 20, No. 6. pp. 235-236.
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