HIGH SENSITIVITY OF VPE-GROWN InGaAs/InP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE.

Yuichi Matsushima, Y. Noda, Y. Kushiro, N. Seki, S. Akiba

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10** minus **9 error rate at 280 Mbit/s was as low as minus 43 dbm, which corresponded to 2 and 7 db improvements over a Ge-APD at 1. 52 and 1. 59 mu m, respectively.

Original languageEnglish
Pages (from-to)235-236
Number of pages2
JournalElectronics Letters
Volume20
Issue number6
Publication statusPublished - 1984 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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