A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10** minus **9 error rate at 280 Mbit/s was as low as minus 43 dbm, which corresponded to 2 and 7 db improvements over a Ge-APD at 1. 52 and 1. 59 mu m, respectively.
|Number of pages||2|
|Publication status||Published - 1984 Jan 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering