High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peaK) InGaAs/InGaAsp MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki, M. Suzuki, M. Takahashi, H. Sano, T. Ido, Toshihiro Kawano, A. Takai

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5.4 mA and a modulation efficiency as high as 13 dB/2 V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1.55 μm.

Original languageEnglish
Pages (from-to)1157-1158
Number of pages2
JournalElectronics Letters
Volume28
Issue number12
Publication statusPublished - 1992 Jun 4
Externally publishedYes

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Electroabsorption modulators
Distributed feedback lasers
Heterojunctions
Modulation
Electric potential
Power control
Energy gap
Capacitance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peaK) InGaAs/InGaAsp MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure. / Aoki, M.; Suzuki, M.; Takahashi, M.; Sano, H.; Ido, T.; Kawano, Toshihiro; Takai, A.

In: Electronics Letters, Vol. 28, No. 12, 04.06.1992, p. 1157-1158.

Research output: Contribution to journalArticle

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AU - Aoki, M.

AU - Suzuki, M.

AU - Takahashi, M.

AU - Sano, H.

AU - Ido, T.

AU - Kawano, Toshihiro

AU - Takai, A.

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