Abstract
An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.
| Original language | English |
|---|---|
| Pages (from-to) | 1157-1158 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 28 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1992 Jun 4 |
| Externally published | Yes |
Keywords
- Integrated optics
- Lasers
- Optical modulation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Aoki, M., Suzuki, M., Takahashi, M., Sano, H., Ido, T., Kawano, T., & Takai, A. (1992). High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure. Electronics Letters, 28(12), 1157-1158. https://doi.org/10.1049/el:19920730