High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki; M. Suzuki; M. Takahashi; H. Sano; T. Ido; T. Kawano; A. Takai

doi:10.1049/el:19920730

High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki^*, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

Original language	English
Pages (from-to)	1157-1158
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	12
DOIs	https://doi.org/10.1049/el:19920730
Publication status	Published - 1992 Jun 4
Externally published	Yes

Keywords

Integrated optics
Lasers
Optical modulation

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19920730

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title = "High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure",

abstract = "An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.",

keywords = "Integrated optics, Lasers, Optical modulation",

author = "M. Aoki and M. Suzuki and M. Takahashi and H. Sano and T. Ido and T. Kawano and A. Takai",

year = "1992",

month = jun,

day = "4",

doi = "10.1049/el:19920730",

language = "English",

volume = "28",

pages = "1157--1158",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

AU - Aoki, M.

AU - Suzuki, M.

AU - Takahashi, M.

AU - Sano, H.

AU - Ido, T.

AU - Kawano, T.

AU - Takai, A.

PY - 1992/6/4

Y1 - 1992/6/4

N2 - An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

AB - An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

KW - Integrated optics

KW - Lasers

KW - Optical modulation

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EP - 1158

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 12

ER -

High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

Abstract

Keywords

ASJC Scopus subject areas

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