High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

Original languageEnglish
Pages (from-to)1157-1158
Number of pages2
JournalElectronics Letters
Volume28
Issue number12
DOIs
Publication statusPublished - 1992 Jun 4
Externally publishedYes

Keywords

  • Integrated optics
  • Lasers
  • Optical modulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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