High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki; M. Suzuki; M. Takahashi; H. Sano; T. Ido; T. Kawano; A. Takai

doi:10.1049/el:19920730

High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki^*, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

Original language	English
Pages (from-to)	1157-1158
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	12
DOIs	https://doi.org/10.1049/el:19920730
Publication status	Published - 1992 Jun 4
Externally published	Yes

Keywords

Integrated optics
Lasers
Optical modulation

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19920730

Cite this

High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure. / Aoki, M.; Suzuki, M.; Takahashi, M.; Sano, H.; Ido, T.; Kawano, T.; Takai, A.

In: Electronics Letters, Vol. 28, No. 12, 04.06.1992, p. 1157-1158.

Research output: Contribution to journal › Article › peer-review

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abstract = "An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.",

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AU - Aoki, M.

AU - Suzuki, M.

AU - Takahashi, M.

AU - Sano, H.

AU - Ido, T.

AU - Kawano, T.

AU - Takai, A.

PY - 1992/6/4

Y1 - 1992/6/4

N2 - An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

AB - An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

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KW - Lasers

KW - Optical modulation

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High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

Abstract

Keywords

ASJC Scopus subject areas

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