High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki*, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

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Engineering & Materials Science