Abstract
We fabricated a 400-G flip-chip interconnection eight-channel EADFB laser array module. The flip-chip interconnection technique provides a higher modulation bandwidth and lower electrical crosstalk than the wire interconnection technique. The 3-dB bandwidth of the flip-chip interconnection subassembly was about 50 GHz. And the electrical crosstalk of the flip-chip interconnection module was suppressed to less than -20 dB below 35 GHz. We obtained clear eye openings for all eight lanes under eight-channel 50-Gb/s simultaneous operation after a 10-km SMF transmission.
| Original language | English |
|---|---|
| Article number | 7064702 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 21 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2015 Nov 1 |
| Externally published | Yes |
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Keywords
- 400 Gigabit Ethernet
- Distributed feedback laser
- EADFB laser array
- Electro-absorption modulator
- InGaAlAs
- Photonic integrated circuits
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique. / Kanazawa, Shigeru; Fujisawa, Takeshi; Ishii, Hiroyuki; Takahata, Kiyoto; Ueda, Yuta; Iga, Ryuzo; Sanjoh, Hiroaki.
In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 21, No. 6, 7064702, 01.11.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique
AU - Kanazawa, Shigeru
AU - Fujisawa, Takeshi
AU - Ishii, Hiroyuki
AU - Takahata, Kiyoto
AU - Ueda, Yuta
AU - Iga, Ryuzo
AU - Sanjoh, Hiroaki
PY - 2015/11/1
Y1 - 2015/11/1
N2 - We fabricated a 400-G flip-chip interconnection eight-channel EADFB laser array module. The flip-chip interconnection technique provides a higher modulation bandwidth and lower electrical crosstalk than the wire interconnection technique. The 3-dB bandwidth of the flip-chip interconnection subassembly was about 50 GHz. And the electrical crosstalk of the flip-chip interconnection module was suppressed to less than -20 dB below 35 GHz. We obtained clear eye openings for all eight lanes under eight-channel 50-Gb/s simultaneous operation after a 10-km SMF transmission.
AB - We fabricated a 400-G flip-chip interconnection eight-channel EADFB laser array module. The flip-chip interconnection technique provides a higher modulation bandwidth and lower electrical crosstalk than the wire interconnection technique. The 3-dB bandwidth of the flip-chip interconnection subassembly was about 50 GHz. And the electrical crosstalk of the flip-chip interconnection module was suppressed to less than -20 dB below 35 GHz. We obtained clear eye openings for all eight lanes under eight-channel 50-Gb/s simultaneous operation after a 10-km SMF transmission.
KW - 400 Gigabit Ethernet
KW - Distributed feedback laser
KW - EADFB laser array
KW - Electro-absorption modulator
KW - InGaAlAs
KW - Photonic integrated circuits
UR - http://www.scopus.com/inward/record.url?scp=84957609028&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84957609028&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2015.2415197
DO - 10.1109/JSTQE.2015.2415197
M3 - Article
VL - 21
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 6
M1 - 7064702
ER -