High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique

Shigeru Kanazawa; Takeshi Fujisawa; Hiroyuki Ishii; Kiyoto Takahata; Yuta Ueda; Ryuzo Iga; Hiroaki Sanjoh

doi:10.1109/JSTQE.2015.2415197

High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique

Shigeru Kanazawa, Takeshi Fujisawa, Hiroyuki Ishii, Kiyoto Takahata, Yuta Ueda, Ryuzo Iga, Hiroaki Sanjoh

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We fabricated a 400-G flip-chip interconnection eight-channel EADFB laser array module. The flip-chip interconnection technique provides a higher modulation bandwidth and lower electrical crosstalk than the wire interconnection technique. The 3-dB bandwidth of the flip-chip interconnection subassembly was about 50 GHz. And the electrical crosstalk of the flip-chip interconnection module was suppressed to less than -20 dB below 35 GHz. We obtained clear eye openings for all eight lanes under eight-channel 50-Gb/s simultaneous operation after a 10-km SMF transmission.

Original language	English
Article number	7064702
Pages (from-to)	183-188
Number of pages	6
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	21
Issue number	6
DOIs	https://doi.org/10.1109/JSTQE.2015.2415197
Publication status	Published - 2015 Nov 1
Externally published	Yes

Keywords

400 Gigabit Ethernet
Distributed feedback laser
EADFB laser array
Electro-absorption modulator
InGaAlAs
Photonic integrated circuits

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/JSTQE.2015.2415197

Cite this

@article{e83b622d087f472fa3316b15becb43c9,

title = "High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique",

abstract = "We fabricated a 400-G flip-chip interconnection eight-channel EADFB laser array module. The flip-chip interconnection technique provides a higher modulation bandwidth and lower electrical crosstalk than the wire interconnection technique. The 3-dB bandwidth of the flip-chip interconnection subassembly was about 50 GHz. And the electrical crosstalk of the flip-chip interconnection module was suppressed to less than -20 dB below 35 GHz. We obtained clear eye openings for all eight lanes under eight-channel 50-Gb/s simultaneous operation after a 10-km SMF transmission.",

keywords = "400 Gigabit Ethernet, Distributed feedback laser, EADFB laser array, Electro-absorption modulator, InGaAlAs, Photonic integrated circuits",

author = "Shigeru Kanazawa and Takeshi Fujisawa and Hiroyuki Ishii and Kiyoto Takahata and Yuta Ueda and Ryuzo Iga and Hiroaki Sanjoh",

note = "Publisher Copyright: {\textcopyright} 1995-2012 IEEE.",

year = "2015",

month = nov,

day = "1",

doi = "10.1109/JSTQE.2015.2415197",

language = "English",

volume = "21",

pages = "183--188",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique

AU - Kanazawa, Shigeru

AU - Fujisawa, Takeshi

AU - Ishii, Hiroyuki

AU - Takahata, Kiyoto

AU - Ueda, Yuta

AU - Iga, Ryuzo

AU - Sanjoh, Hiroaki

PY - 2015/11/1

Y1 - 2015/11/1

N2 - We fabricated a 400-G flip-chip interconnection eight-channel EADFB laser array module. The flip-chip interconnection technique provides a higher modulation bandwidth and lower electrical crosstalk than the wire interconnection technique. The 3-dB bandwidth of the flip-chip interconnection subassembly was about 50 GHz. And the electrical crosstalk of the flip-chip interconnection module was suppressed to less than -20 dB below 35 GHz. We obtained clear eye openings for all eight lanes under eight-channel 50-Gb/s simultaneous operation after a 10-km SMF transmission.

AB - We fabricated a 400-G flip-chip interconnection eight-channel EADFB laser array module. The flip-chip interconnection technique provides a higher modulation bandwidth and lower electrical crosstalk than the wire interconnection technique. The 3-dB bandwidth of the flip-chip interconnection subassembly was about 50 GHz. And the electrical crosstalk of the flip-chip interconnection module was suppressed to less than -20 dB below 35 GHz. We obtained clear eye openings for all eight lanes under eight-channel 50-Gb/s simultaneous operation after a 10-km SMF transmission.

KW - 400 Gigabit Ethernet

KW - Distributed feedback laser

KW - EADFB laser array

KW - Electro-absorption modulator

KW - InGaAlAs

KW - Photonic integrated circuits

UR - http://www.scopus.com/inward/record.url?scp=84957609028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957609028&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2015.2415197

DO - 10.1109/JSTQE.2015.2415197

M3 - Article

AN - SCOPUS:84957609028

VL - 21

SP - 183

EP - 188

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 6

M1 - 7064702

ER -

High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique

Abstract

Keywords

ASJC Scopus subject areas

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