High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure

M. Aoki; M. Suzuki; M. Takahashi; H. Sano; T. Ido; T. Kawano; A. Takai

doi:10.1109/ISLC.1992.763621

High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure

M. Aoki, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

EA-modulator integrated DFB lasers have become one of the keydevices in multigigabit long-distance lightwave communications. [1, 2] Recently, a new method of integrating photonic devices has been proposed, using the in-plane local bandgap energy control of the MQW structures during simultaneous selective area growth (SAG) by MOCVD. [3, 4] This technique offers a high optical coupling efficiency as well as reproducible fabrication, which are essential in such optical integrated devices. This paper describes an MQW EA-modulator integrated with a DFB lase::, fabricated by SAG and a semi-insulating BH process, aimed at a high on/off ratio and high-speed operation.

Original language	English
Title of host publication	Conference Digest - 13th IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	166-167
Number of pages	2
ISBN (Electronic)	4930813514
DOIs	https://doi.org/10.1109/ISLC.1992.763621
Publication status	Published - 1992 Jan 1
Externally published	Yes
Event	13th IEEE International Semiconductor Laser Conference, ISLC 1992 - Takamatsu, Kagawa, Japan Duration: 1992 Sept 21 → 1992 Sept 25

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	1992-September
ISSN (Print)	0899-9406

Conference

Conference	13th IEEE International Semiconductor Laser Conference, ISLC 1992
Country/Territory	Japan
City	Takamatsu, Kagawa
Period	92/9/21 → 92/9/25

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.1992.763621

Cite this

Aoki, M., Suzuki, M., Takahashi, M., Sano, H., Ido, T., Kawano, T., & Takai, A. (1992). High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure. In Conference Digest - 13th IEEE International Semiconductor Laser Conference (pp. 166-167). [763621] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 1992-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.1992.763621

High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure. / Aoki, M.; Suzuki, M.; Takahashi, M. et al.

Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 1992. p. 166-167 763621 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 1992-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Aoki, M, Suzuki, M, Takahashi, M, Sano, H, Ido, T, Kawano, T & Takai, A 1992, High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure. in Conference Digest - 13th IEEE International Semiconductor Laser Conference., 763621, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 1992-September, Institute of Electrical and Electronics Engineers Inc., pp. 166-167, 13th IEEE International Semiconductor Laser Conference, ISLC 1992, Takamatsu, Kagawa, Japan, 92/9/21. https://doi.org/10.1109/ISLC.1992.763621

Aoki M, Suzuki M, Takahashi M, Sano H, Ido T, Kawano T et al. High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure. In Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc. 1992. p. 166-167. 763621. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.1992.763621

Aoki, M. ; Suzuki, M. ; Takahashi, M. et al. / High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure. Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 166-167 (Conference Digest - IEEE International Semiconductor Laser Conference).

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AU - Ido, T.

AU - Kawano, T.

AU - Takai, A.

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AB - EA-modulator integrated DFB lasers have become one of the keydevices in multigigabit long-distance lightwave communications. [1, 2] Recently, a new method of integrating photonic devices has been proposed, using the in-plane local bandgap energy control of the MQW structures during simultaneous selective area growth (SAG) by MOCVD. [3, 4] This technique offers a high optical coupling efficiency as well as reproducible fabrication, which are essential in such optical integrated devices. This paper describes an MQW EA-modulator integrated with a DFB lase::, fabricated by SAG and a semi-insulating BH process, aimed at a high on/off ratio and high-speed operation.

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High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure

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