High-speed electro-absorption semiconductor light modulator for soliton pulse generators

Yuichi Matsushima, Masatoshi Suzuki, Hideaki Tanaka, Yukitoshi Takahashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A simple and stable technique of optical short pulse generation for soliton transmission based on an electro-absorption (E-A) modulator is presented. By using the nonlinearity of the absorption characteristics of the modulator, ultrashort optical pulse trains having a shape close to a sech2 shape can be generated just with sinusoidal modulation. Quasi-transform-limited optical pulses with a time-bandwidth product of 0.32 were successfully generated by the sinusoidally driven InGaAsP E-A modulator up to a 20 GHz repetition rate. The high quality of the modulator-generated pulses has been proven by long-distance soliton transmissions. As for the applications of this scheme, a λ/4-shifted DFB laser/E-A modulator integrated light source and a tandem-integrated E-A modulator (TEAM) to form a single-chip soliton transmitter are also described.

Original languageEnglish
Pages (from-to)75-88
Number of pages14
JournalOptoelectronics Tokyo
Volume10
Issue number1
Publication statusPublished - 1995 Mar
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Matsushima, Y., Suzuki, M., Tanaka, H., & Takahashi, Y. (1995). High-speed electro-absorption semiconductor light modulator for soliton pulse generators. Optoelectronics Tokyo, 10(1), 75-88.