High-speed growth of 4H-SiC single crystal using Si-Cr based melt

M. Kado, H. Daikoku, H. Sakamoto, H. Suzuki, T. Bessho, N. Yashiro, K. Kusunoki, N. Okada, K. Moriguchi, K. Kamei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

32 Citations (Scopus)

Abstract

In this study, we have investigated the rate-limiting process of 4H-SiC solution growth using Si-Cr based melt, and have tried high-speed growth. It is revealed that the rate-limiting process of SiC growth under our experimental condition is interface kinetics, which can be controlled by such factors as temperature and super saturation of carbon. By enhancing the interface kinetics, SiC crystal has been grown at a high rate of 2 mm/h. The FWHM values of X-ray rocking curves and threading dislocation density of the grown crystals are almost the same as those of the seed crystal. Possibility of high-speed and high-quality growth of 4H-SiC has been indicated.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages73-76
Number of pages4
Volume740-742
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: 2012 Sep 22012 Sep 6

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)02555476

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period12/9/212/9/6

Fingerprint

high speed
Single crystals
single crystals
Crystals
crystals
Kinetics
Supersaturation
kinetics
supersaturation
Full width at half maximum
Dislocations (crystals)
seeds
Carbon
saturation
X rays
carbon
curves
x rays
Temperature
temperature

Keywords

  • 4H-SiC
  • Bulk growth
  • Growth rate
  • Solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kado, M., Daikoku, H., Sakamoto, H., Suzuki, H., Bessho, T., Yashiro, N., ... Kamei, K. (2013). High-speed growth of 4H-SiC single crystal using Si-Cr based melt. In Materials Science Forum (Vol. 740-742, pp. 73-76). (Materials Science Forum; Vol. 740-742). https://doi.org/10.4028/www.scientific.net/MSF.740-742.73

High-speed growth of 4H-SiC single crystal using Si-Cr based melt. / Kado, M.; Daikoku, H.; Sakamoto, H.; Suzuki, H.; Bessho, T.; Yashiro, N.; Kusunoki, K.; Okada, N.; Moriguchi, K.; Kamei, K.

Materials Science Forum. Vol. 740-742 2013. p. 73-76 (Materials Science Forum; Vol. 740-742).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kado, M, Daikoku, H, Sakamoto, H, Suzuki, H, Bessho, T, Yashiro, N, Kusunoki, K, Okada, N, Moriguchi, K & Kamei, K 2013, High-speed growth of 4H-SiC single crystal using Si-Cr based melt. in Materials Science Forum. vol. 740-742, Materials Science Forum, vol. 740-742, pp. 73-76, 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 12/9/2. https://doi.org/10.4028/www.scientific.net/MSF.740-742.73
Kado M, Daikoku H, Sakamoto H, Suzuki H, Bessho T, Yashiro N et al. High-speed growth of 4H-SiC single crystal using Si-Cr based melt. In Materials Science Forum. Vol. 740-742. 2013. p. 73-76. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.740-742.73
Kado, M. ; Daikoku, H. ; Sakamoto, H. ; Suzuki, H. ; Bessho, T. ; Yashiro, N. ; Kusunoki, K. ; Okada, N. ; Moriguchi, K. ; Kamei, K. / High-speed growth of 4H-SiC single crystal using Si-Cr based melt. Materials Science Forum. Vol. 740-742 2013. pp. 73-76 (Materials Science Forum).
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