The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering