High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

Y. Matsushima, S. Akiba, K. Sakai, Y. Kushiro, Y. Noda, K. Utaka

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.

Original languageEnglish
Pages (from-to)945-946
Number of pages2
JournalElectronics Letters
Volume18
Issue number22
DOIs
Publication statusPublished - 1982 Oct 28
Externally publishedYes

Keywords

  • Photodiodes
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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