HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS.

Yuichi Matsushima, S. AKIBA, K. SAKAI, Y. KUSHIRO, Y. NODA, Katsuyuki Utaka

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

THE OPTICAL RESPONSE TIME OF AN INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) WITH INGAASP BUFFER LAYERS IS REPORTED. IT IS SHOWN THAT THE BUFFER LAYERS PLAY AN IMPORTANTROLE IN REDUCTION OF THE PILE-UP EFFECT AND ARE CONSIDERED TO BE EFFECTIVE IN ACHIEVING HIGH-SPEED INGAAS/INP HAPDS.

Original languageEnglish
Pages (from-to)945-946
Number of pages2
JournalELECTRON LETT
VolumeV 18
Issue numberN 22
Publication statusPublished - 1982 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Matsushima, Y., AKIBA, S., SAKAI, K., KUSHIRO, Y., NODA, Y., & Utaka, K. (1982). HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS. ELECTRON LETT, V 18(N 22), 945-946.