HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS.

Yuichi Matsushima, S. AKIBA, K. SAKAI, Y. KUSHIRO, Y. NODA, Katsuyuki Utaka

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

THE OPTICAL RESPONSE TIME OF AN INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) WITH INGAASP BUFFER LAYERS IS REPORTED. IT IS SHOWN THAT THE BUFFER LAYERS PLAY AN IMPORTANTROLE IN REDUCTION OF THE PILE-UP EFFECT AND ARE CONSIDERED TO BE EFFECTIVE IN ACHIEVING HIGH-SPEED INGAAS/INP HAPDS.

Original languageEnglish
Pages (from-to)945-946
Number of pages2
JournalELECTRON LETT
VolumeV 18
Issue numberN 22
Publication statusPublished - 1982 Jan 1
Externally publishedYes

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Avalanche photodiodes
Buffer layers
Heterojunctions
Piles

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Matsushima, Y., AKIBA, S., SAKAI, K., KUSHIRO, Y., NODA, Y., & Utaka, K. (1982). HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS. ELECTRON LETT, V 18(N 22), 945-946.

HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS. / Matsushima, Yuichi; AKIBA, S.; SAKAI, K.; KUSHIRO, Y.; NODA, Y.; Utaka, Katsuyuki.

In: ELECTRON LETT, Vol. V 18, No. N 22, 01.01.1982, p. 945-946.

Research output: Contribution to journalArticle

Matsushima, Y, AKIBA, S, SAKAI, K, KUSHIRO, Y, NODA, Y & Utaka, K 1982, 'HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS.', ELECTRON LETT, vol. V 18, no. N 22, pp. 945-946.
Matsushima Y, AKIBA S, SAKAI K, KUSHIRO Y, NODA Y, Utaka K. HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS. ELECTRON LETT. 1982 Jan 1;V 18(N 22):945-946.
Matsushima, Yuichi ; AKIBA, S. ; SAKAI, K. ; KUSHIRO, Y. ; NODA, Y. ; Utaka, Katsuyuki. / HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS. In: ELECTRON LETT. 1982 ; Vol. V 18, No. N 22. pp. 945-946.
@article{2e1c186180cf412bbbe934494f8eba9a,
title = "HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS.",
abstract = "THE OPTICAL RESPONSE TIME OF AN INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) WITH INGAASP BUFFER LAYERS IS REPORTED. IT IS SHOWN THAT THE BUFFER LAYERS PLAY AN IMPORTANTROLE IN REDUCTION OF THE PILE-UP EFFECT AND ARE CONSIDERED TO BE EFFECTIVE IN ACHIEVING HIGH-SPEED INGAAS/INP HAPDS.",
author = "Yuichi Matsushima and S. AKIBA and K. SAKAI and Y. KUSHIRO and Y. NODA and Katsuyuki Utaka",
year = "1982",
month = "1",
day = "1",
language = "English",
volume = "V 18",
pages = "945--946",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "N 22",

}

TY - JOUR

T1 - HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS.

AU - Matsushima, Yuichi

AU - AKIBA, S.

AU - SAKAI, K.

AU - KUSHIRO, Y.

AU - NODA, Y.

AU - Utaka, Katsuyuki

PY - 1982/1/1

Y1 - 1982/1/1

N2 - THE OPTICAL RESPONSE TIME OF AN INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) WITH INGAASP BUFFER LAYERS IS REPORTED. IT IS SHOWN THAT THE BUFFER LAYERS PLAY AN IMPORTANTROLE IN REDUCTION OF THE PILE-UP EFFECT AND ARE CONSIDERED TO BE EFFECTIVE IN ACHIEVING HIGH-SPEED INGAAS/INP HAPDS.

AB - THE OPTICAL RESPONSE TIME OF AN INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) WITH INGAASP BUFFER LAYERS IS REPORTED. IT IS SHOWN THAT THE BUFFER LAYERS PLAY AN IMPORTANTROLE IN REDUCTION OF THE PILE-UP EFFECT AND ARE CONSIDERED TO BE EFFECTIVE IN ACHIEVING HIGH-SPEED INGAAS/INP HAPDS.

UR - http://www.scopus.com/inward/record.url?scp=0020191304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020191304&partnerID=8YFLogxK

M3 - Article

VL - V 18

SP - 945

EP - 946

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - N 22

ER -