High-temperature (300 °C) operation of npn-type GaN/InGaN double heterojunction bipolar transistors

Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated high-temperature (300 °C) characteristics of npn-type GaN/In0.07Ga0.93N double heterojunction bipolar transistors (DHBTs). The current gain obtained at 300 °C is as high as 308, although it decreases with increasing temperature. In Gummel plots, both base and collector current increases with increasing base-emitter voltage. While the maximum collector current at 300 °C is similar to that at room temperature (RT), the maximum base current monotonically increases with increasing temperature. Consequently, the reduction of the current gain with temperature is attributed to the increase in the base current. Since the activation energy of the reduction of the current gain is larger than the expected value assuming the increase in the hole backinjection current from the base into the emitter, an increase in the carrier concentration of the p-In0.07Ga 0.93N base with temperature is considered to be attributed to the reduction of the current gain.

Original languageEnglish
Pages (from-to)2957-2959
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number9
DOIs
Publication statusPublished - 2008
Externally publishedYes

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bipolar transistors
heterojunctions
accumulators
emitters
temperature
plots
activation energy
electric potential
room temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

High-temperature (300 °C) operation of npn-type GaN/InGaN double heterojunction bipolar transistors. / Nishikawa, Atsushi; Kumakura, Kazuhide; Kasu, Makoto; Makimoto, Toshiki.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 9, 2008, p. 2957-2959.

Research output: Contribution to journalArticle

@article{04c8f646962b418ba1f0627900b4d356,
title = "High-temperature (300 °C) operation of npn-type GaN/InGaN double heterojunction bipolar transistors",
abstract = "We investigated high-temperature (300 °C) characteristics of npn-type GaN/In0.07Ga0.93N double heterojunction bipolar transistors (DHBTs). The current gain obtained at 300 °C is as high as 308, although it decreases with increasing temperature. In Gummel plots, both base and collector current increases with increasing base-emitter voltage. While the maximum collector current at 300 °C is similar to that at room temperature (RT), the maximum base current monotonically increases with increasing temperature. Consequently, the reduction of the current gain with temperature is attributed to the increase in the base current. Since the activation energy of the reduction of the current gain is larger than the expected value assuming the increase in the hole backinjection current from the base into the emitter, an increase in the carrier concentration of the p-In0.07Ga 0.93N base with temperature is considered to be attributed to the reduction of the current gain.",
author = "Atsushi Nishikawa and Kazuhide Kumakura and Makoto Kasu and Toshiki Makimoto",
year = "2008",
doi = "10.1002/pssc.200779299",
language = "English",
volume = "5",
pages = "2957--2959",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "9",

}

TY - JOUR

T1 - High-temperature (300 °C) operation of npn-type GaN/InGaN double heterojunction bipolar transistors

AU - Nishikawa, Atsushi

AU - Kumakura, Kazuhide

AU - Kasu, Makoto

AU - Makimoto, Toshiki

PY - 2008

Y1 - 2008

N2 - We investigated high-temperature (300 °C) characteristics of npn-type GaN/In0.07Ga0.93N double heterojunction bipolar transistors (DHBTs). The current gain obtained at 300 °C is as high as 308, although it decreases with increasing temperature. In Gummel plots, both base and collector current increases with increasing base-emitter voltage. While the maximum collector current at 300 °C is similar to that at room temperature (RT), the maximum base current monotonically increases with increasing temperature. Consequently, the reduction of the current gain with temperature is attributed to the increase in the base current. Since the activation energy of the reduction of the current gain is larger than the expected value assuming the increase in the hole backinjection current from the base into the emitter, an increase in the carrier concentration of the p-In0.07Ga 0.93N base with temperature is considered to be attributed to the reduction of the current gain.

AB - We investigated high-temperature (300 °C) characteristics of npn-type GaN/In0.07Ga0.93N double heterojunction bipolar transistors (DHBTs). The current gain obtained at 300 °C is as high as 308, although it decreases with increasing temperature. In Gummel plots, both base and collector current increases with increasing base-emitter voltage. While the maximum collector current at 300 °C is similar to that at room temperature (RT), the maximum base current monotonically increases with increasing temperature. Consequently, the reduction of the current gain with temperature is attributed to the increase in the base current. Since the activation energy of the reduction of the current gain is larger than the expected value assuming the increase in the hole backinjection current from the base into the emitter, an increase in the carrier concentration of the p-In0.07Ga 0.93N base with temperature is considered to be attributed to the reduction of the current gain.

UR - http://www.scopus.com/inward/record.url?scp=65749083857&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65749083857&partnerID=8YFLogxK

U2 - 10.1002/pssc.200779299

DO - 10.1002/pssc.200779299

M3 - Article

AN - SCOPUS:65749083857

VL - 5

SP - 2957

EP - 2959

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 9

ER -