High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes

K. Ueda; K. Kawamoto; H. Asano

doi:10.1016/j.diamond.2015.03.006

High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes

K. Ueda^*, K. Kawamoto, H. Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated. Cu Schottky diodes showed clear rectification up to ∼ 700 °C. The current-voltage characteristics of the diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ∼ 400 °C. The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm² and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky diodes are promising for high-temperature power applications.

Original language	English
Article number	6380
Pages (from-to)	28-31
Number of pages	4
Journal	Diamond and Related Materials
Volume	57
DOIs	https://doi.org/10.1016/j.diamond.2015.03.006
Publication status	Published - 2015 Aug 1
Externally published	Yes

Keywords

Breakdown voltage
Diamond
High-temperature
Power devices
Schottky diodes
Semiconductors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2015.03.006

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title = "High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes",

abstract = "High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated. Cu Schottky diodes showed clear rectification up to ∼ 700 °C. The current-voltage characteristics of the diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ∼ 400 °C. The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky diodes are promising for high-temperature power applications.",

keywords = "Breakdown voltage, Diamond, High-temperature, Power devices, Schottky diodes, Semiconductors",

author = "K. Ueda and K. Kawamoto and H. Asano",

note = "Funding Information: This work was supported by JSPS KAKENHI (grant number: 24560372 ), the Nippon Sheet Glass Foundation for Materials Science and Engineering , the Kurata memorial Hitachi science and technology foundation , and the SCAT Technology Research Foundation . Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = aug,

day = "1",

doi = "10.1016/j.diamond.2015.03.006",

language = "English",

volume = "57",

pages = "28--31",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes

AU - Ueda, K.

AU - Kawamoto, K.

AU - Asano, H.

N1 - Funding Information: This work was supported by JSPS KAKENHI (grant number: 24560372 ), the Nippon Sheet Glass Foundation for Materials Science and Engineering , the Kurata memorial Hitachi science and technology foundation , and the SCAT Technology Research Foundation . Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated. Cu Schottky diodes showed clear rectification up to ∼ 700 °C. The current-voltage characteristics of the diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ∼ 400 °C. The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky diodes are promising for high-temperature power applications.

AB - High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated. Cu Schottky diodes showed clear rectification up to ∼ 700 °C. The current-voltage characteristics of the diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ∼ 400 °C. The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky diodes are promising for high-temperature power applications.

KW - Breakdown voltage

KW - Diamond

KW - High-temperature

KW - Power devices

KW - Schottky diodes

KW - Semiconductors

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U2 - 10.1016/j.diamond.2015.03.006

DO - 10.1016/j.diamond.2015.03.006

M3 - Article

AN - SCOPUS:84939775221

SN - 0925-9635

VL - 57

SP - 28

EP - 31

JO - Diamond and Related Materials

JF - Diamond and Related Materials

M1 - 6380

ER -

High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes

Abstract

Keywords

ASJC Scopus subject areas

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