High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes

K. Ueda*, K. Kawamoto, H. Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated. Cu Schottky diodes showed clear rectification up to ∼ 700 °C. The current-voltage characteristics of the diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ∼ 400 °C. The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky diodes are promising for high-temperature power applications.

Original languageEnglish
Article number6380
Pages (from-to)28-31
Number of pages4
JournalDiamond and Related Materials
Volume57
DOIs
Publication statusPublished - 2015 Aug 1
Externally publishedYes

Keywords

  • Breakdown voltage
  • Diamond
  • High-temperature
  • Power devices
  • Schottky diodes
  • Semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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