High-temperature characteristics and stability of Cu/diamond Schottky diodes

Kenji Ueda, Keita Kawamoto, Hidefumi Asano

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The high-temperature electrical characteristics and stability of Cu/diamond Schottky diodes were examined and compared with those of Schottky diodes using Ag and Ni electrodes. The Cu/diamond Schottky diodes exhibited clear rectification up to 700 °C, indicating that high-temperature operation is possible using these diodes. This is thought to be due to their large Schottky barrier height of ∼1.6 eV. The high-temperature stability of the Cu/diamond Schottky diodes was better than that for diodes using Ag or Ni, probably because of less interfacial reaction or interdiffusion between the Cu and diamond.

Original languageEnglish
Article number04EP05
JournalJapanese journal of applied physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - 2014 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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