TY - JOUR
T1 - High-temperature characteristics and stability of Cu/diamond Schottky diodes
AU - Ueda, Kenji
AU - Kawamoto, Keita
AU - Asano, Hidefumi
PY - 2014/4
Y1 - 2014/4
N2 - The high-temperature electrical characteristics and stability of Cu/diamond Schottky diodes were examined and compared with those of Schottky diodes using Ag and Ni electrodes. The Cu/diamond Schottky diodes exhibited clear rectification up to 700 °C, indicating that high-temperature operation is possible using these diodes. This is thought to be due to their large Schottky barrier height of ∼1.6 eV. The high-temperature stability of the Cu/diamond Schottky diodes was better than that for diodes using Ag or Ni, probably because of less interfacial reaction or interdiffusion between the Cu and diamond.
AB - The high-temperature electrical characteristics and stability of Cu/diamond Schottky diodes were examined and compared with those of Schottky diodes using Ag and Ni electrodes. The Cu/diamond Schottky diodes exhibited clear rectification up to 700 °C, indicating that high-temperature operation is possible using these diodes. This is thought to be due to their large Schottky barrier height of ∼1.6 eV. The high-temperature stability of the Cu/diamond Schottky diodes was better than that for diodes using Ag or Ni, probably because of less interfacial reaction or interdiffusion between the Cu and diamond.
UR - http://www.scopus.com/inward/record.url?scp=84903276922&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903276922&partnerID=8YFLogxK
U2 - 10.7567/JJAP.53.04EP05
DO - 10.7567/JJAP.53.04EP05
M3 - Article
AN - SCOPUS:84903276922
VL - 53
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 SPEC. ISSUE
M1 - 04EP05
ER -